Polymer semiconductor solar cells

M.J. Cohen, J. Harris
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Abstract

We report the first solar cell whose junction is formed by a polymer-semiconductor interface. Open circuit voltages, Voc> 0.7 V have been observed on cells consisting of a thin film of polymeric sulfur-nitride, (SN)x, deposited on GaAs. This is an enhancement of more than 40% over the Voccommonly measured with metal-GaAs solar cells. Initial efforts have resulted in efficiencies >6% without antireflection coatings. Similar enhancements in Vocare observed in (SN)x-silicon solar cells. The doped polymer (SNBr0.4)xhas a higher conductivity and greater transmission of the solar spectrum than (SN)x. The implications of (SNBr0.4)xto both single crystal and polycrystalline GaAs solar cells will be discussed.
聚合物半导体太阳能电池
我们报道了第一个由聚合物-半导体界面形成结的太阳能电池。在由沉积在砷化镓上的聚合硫氮(SN)x薄膜组成的电池上,可以观察到Voc> 0.7 V的开路电压。这比金属-砷化镓太阳能电池测量的vocc提高了40%以上。最初的研究表明,在没有增透涂层的情况下,效率>6%。在(SN)x-硅太阳能电池中观察到类似的Vocare增强。掺杂的聚合物(SNBr0.4)x比(SN)x具有更高的电导率和更大的太阳光谱透射率。本文将讨论(SNBr0.4)x对单晶和多晶砷化镓太阳能电池的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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