{"title":"MIS太阳能电池界面状态测量与计算机模拟研究","authors":"J.K. Kim, W. Anderson, S. Hyland","doi":"10.1109/IEDM.1978.189359","DOIUrl":null,"url":null,"abstract":"Experimental surface state studies on MIS diodes show average surface state density values of 2.5 × 10<sup>11</sup>, 5.5 × 10<sup>11</sup>, 3 × 10<sup>12</sup>, and 4 × 10<sup>12</sup>ev<sup>-1</sup>cm<sup>-2</sup>for","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Interface state measurements and computer simulation studies of MIS solar cells\",\"authors\":\"J.K. Kim, W. Anderson, S. Hyland\",\"doi\":\"10.1109/IEDM.1978.189359\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Experimental surface state studies on MIS diodes show average surface state density values of 2.5 × 10<sup>11</sup>, 5.5 × 10<sup>11</sup>, 3 × 10<sup>12</sup>, and 4 × 10<sup>12</sup>ev<sup>-1</sup>cm<sup>-2</sup>for\",\"PeriodicalId\":164556,\"journal\":{\"name\":\"1978 International Electron Devices Meeting\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1978 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1978.189359\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1978 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1978.189359","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Interface state measurements and computer simulation studies of MIS solar cells
Experimental surface state studies on MIS diodes show average surface state density values of 2.5 × 1011, 5.5 × 1011, 3 × 1012, and 4 × 1012ev-1cm-2for
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