{"title":"串联结太阳能电池的器件模型","authors":"W. T. Matzen, S. Chiang, B. G. Carbajal","doi":"10.1109/IEDM.1978.189513","DOIUrl":null,"url":null,"abstract":"A conceptual device model has been developed to explain operation of the tandem junction cell (TJC) when back contacts only are used. Operation and parameters of the cell are explained by transistor action. Experimental observations are presented which confirm that current is collected for carrier generation in the front uncontacted n(plus) region. The model should be useful as a guideline to optimize the TJC by application of transistor design principles.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A device model for the tandem junction solar cell\",\"authors\":\"W. T. Matzen, S. Chiang, B. G. Carbajal\",\"doi\":\"10.1109/IEDM.1978.189513\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A conceptual device model has been developed to explain operation of the tandem junction cell (TJC) when back contacts only are used. Operation and parameters of the cell are explained by transistor action. Experimental observations are presented which confirm that current is collected for carrier generation in the front uncontacted n(plus) region. The model should be useful as a guideline to optimize the TJC by application of transistor design principles.\",\"PeriodicalId\":164556,\"journal\":{\"name\":\"1978 International Electron Devices Meeting\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1978 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1978.189513\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1978 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1978.189513","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A conceptual device model has been developed to explain operation of the tandem junction cell (TJC) when back contacts only are used. Operation and parameters of the cell are explained by transistor action. Experimental observations are presented which confirm that current is collected for carrier generation in the front uncontacted n(plus) region. The model should be useful as a guideline to optimize the TJC by application of transistor design principles.
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