{"title":"Interface state measurements and computer simulation studies of MIS solar cells","authors":"J.K. Kim, W. Anderson, S. Hyland","doi":"10.1109/IEDM.1978.189359","DOIUrl":null,"url":null,"abstract":"Experimental surface state studies on MIS diodes show average surface state density values of 2.5 × 10<sup>11</sup>, 5.5 × 10<sup>11</sup>, 3 × 10<sup>12</sup>, and 4 × 10<sup>12</sup>ev<sup>-1</sup>cm<sup>-2</sup>for","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1978 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1978.189359","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Experimental surface state studies on MIS diodes show average surface state density values of 2.5 × 1011, 5.5 × 1011, 3 × 1012, and 4 × 1012ev-1cm-2for
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