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1978 International Electron Devices Meeting最新文献

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Characteristics of short channel MOSFETs in the punch-through current mode 击穿电流模式下短沟道mosfet的特性
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189353
K. Shimohigashi, J. Barnes, R. Dutton
{"title":"Characteristics of short channel MOSFETs in the punch-through current mode","authors":"K. Shimohigashi, J. Barnes, R. Dutton","doi":"10.1109/IEDM.1978.189353","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189353","url":null,"abstract":"Results of two-dimensional device analysis are compared with experiment for 0.8 µm Si-Gate ion implanted MOS devices operated under conditions of punch-through transport. Characterization of the punch-through mode of device operation (a critical factor which limits the maximum drain voltage of submicron MOS VLSI devices) with experiment and simulation has shown that the observed power law dependence of IDSvs VDS(VGS=VSB=0) is related to the drain induced barrier-height lowering. This simulation, which combines results of the process simulation program (SUPREM) and device simulation program (CADDET), is shown to predict the behavior of this mode of operation for sub-micron channel devices where previous one-dimensional theory has failed.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131918325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
"The use, characterization, and reliability implications of vacuum deposited silicon nitride as a capacitor dielectric in integrated circuits" 真空沉积氮化硅作为集成电路中电容器电介质的使用、特性和可靠性影响
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189453
R. Roop, J. Saltich
{"title":"\"The use, characterization, and reliability implications of vacuum deposited silicon nitride as a capacitor dielectric in integrated circuits\"","authors":"R. Roop, J. Saltich","doi":"10.1109/IEDM.1978.189453","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189453","url":null,"abstract":"This work discusses the implementation, characterization, and reliability aspects of a vacuum deposited silicon nitride film used as a capacitor dielectric in integrated circuits. Capacitors with silicon dioxide, silicon nitride (Si3N4), and silicon dioxide/ silicon nitride sandwich were fabricated using processing techniques compatible with linear integrated circuit manufacture. Failure rates before and after bias-temperature stressing were compared. Defect densities, breakdown, dielectric constant, leakage, and dissipation factor data will be presented.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134020847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Multiple internal reflection IR spectroscopy of CVD SiO2, SiOxNyand SiO3N4films CVD SiO2、sioxny4和sio3n4薄膜的多次内反射红外光谱研究
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189452
P. Murau, B. Singer
{"title":"Multiple internal reflection IR spectroscopy of CVD SiO2, SiOxNyand SiO3N4films","authors":"P. Murau, B. Singer","doi":"10.1109/IEDM.1978.189452","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189452","url":null,"abstract":"Thin 200-500 Å films of chemically-vapor-deposited (CVD) SiO<inf>2</inf>, SiO<inf>x</inf>N<inf>y</inf>and Si<inf>3</inf>N<inf>4</inf>are technologically important dielectric materials in integrated circuits. Si<inf>3</inf>N<inf>4</inf>, for example, is used as a gate dielectric in non-volatile MNOS memory devices (1), and as an encapsulating layer for GaAs devices against surface damage during post-implant anneals (2). The processing and annealing conditions of CVD Si<inf>3</inf>N<inf>4</inf>can significantly alter the physical and chemical properties of the film which ultimately will have a pronounced effect on the performance of the device. A very sensitive tool for chemically analyzing these thin CVD films is by multiple internal reflection IR spectroscopy (MIR). The various active vibrational modes associated with Si, O, N and H can be detected. CVD Si<inf>3</inf>N<inf>4</inf>films have been characterized from MIR spectra, ellipsometry, etch rate, and conductivity. The influence of the Si<inf>3</inf>N<inf>4</inf>film properties on the performance of the MNOS memory devices will be discussed briefly.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131183720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bandgap narrowing in heavily doped silicon 重掺杂硅中的带隙缩小
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189417
H. Lanyon, R. Tuft
{"title":"Bandgap narrowing in heavily doped silicon","authors":"H. Lanyon, R. Tuft","doi":"10.1109/IEDM.1978.189417","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189417","url":null,"abstract":"A model of bandgap reduction in silicon through the stored electrostatic energy of majority-minority carrier pairs is developed and compared with the experimental results of other workers in the doping range from 3×10<sup>17</sup>to 3.3×10<sup>19</sup>/cc. at room temperature. An analytic expression for the bandgap reduction is obtained: Δε<inf>g</inf>= 3q<sup>2</sup>/(16πε) . (q<sup>2</sup>N/εkT)<sup>½</sup>having a square root dependence on the doping concentration. At room temperature the bandgap narrowing follows the relationship Δε<inf>g</inf>= 22.5 (N/10<sup>18</sup>)<sup>½</sup>meV The experimental data are in excellent agreement with this expression, the experimental coefficient being within 1% of the theoretical expression.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132996660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 34
Hybrid InSb focal plane array fabrication 混合InSb焦平面阵列的制造
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189466
R. Hoendervoogt, K. Kormos, J. Rosbeck, J. Toman, C. Burgett
{"title":"Hybrid InSb focal plane array fabrication","authors":"R. Hoendervoogt, K. Kormos, J. Rosbeck, J. Toman, C. Burgett","doi":"10.1109/IEDM.1978.189466","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189466","url":null,"abstract":"Large two-dimensional photovoltaic infrared detector arrays have been produced using the hybrid combination of InSb coupled to a silicon CCD. The hybridization process uses indium interconnect pads, which electrically couple each InSb photodiode to a CCD input structure. The entire InSb array is optically thin to allow the backside illumination of the InSb for high packing density. This process is also applicable to other intrinsic detector materials, such as InGaSb and HgCdTe. Production of 32 × 32 mosaic arrays with elements on 4-mil centers has demonstrated high interconnect yield and reliability. Fabrication of larger 58 × 62 arrays of similar design is progressing.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"286 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132584387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Arsenic emitter effects 砷辐射源效应
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189454
A. Wieder
{"title":"Arsenic emitter effects","authors":"A. Wieder","doi":"10.1109/IEDM.1978.189454","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189454","url":null,"abstract":"Recombination mechanisms and bandgap narrowing effects have proven to affect device performance significantly. The trend to minimum size devices stresses the significance of these effects even more so. Nevertheless bandgap narrowing effects have only been measured at devices for boron and not yet for n-type material. These effects, however, are of most interest in the heavily doped regions of emitters and subcollectors.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133168087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
The impact of ion implantation on VLSI 离子注入对VLSI的影响
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189483
H. Ryssel
{"title":"The impact of ion implantation on VLSI","authors":"H. Ryssel","doi":"10.1109/IEDM.1978.189483","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189483","url":null,"abstract":"In this paper problems concerned with the application of ion implantation to VLSI technology are discussed. The problems discussed involve segregation, oxidation, diffusion, lateral spread, and as new applications of ion implantation gettering, local oxidation, buried layers, damage etching, and beam writing.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133198241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Taper isolated dynamic gain RAM cell 锥形隔离动态增益RAM单元
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189516
P. Chatterjee, G. Taylor, M. Malwah
{"title":"Taper isolated dynamic gain RAM cell","authors":"P. Chatterjee, G. Taylor, M. Malwah","doi":"10.1109/IEDM.1978.189516","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189516","url":null,"abstract":"This paper describes a one-transistor only, ROM-like dynamic RAM cell, which operates on the principle of a dynamic change in gain or threshold of the device constituting the cell. There is no capacitor in this cell. This concept is radically different from the principle of operation of the conventional one-transistor storage memory cell, which actually consists of a storage capacitor in addition to one transistor, and which stores and senses a fixed charge packet.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127872089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Readout of a Pb0.80Sn0.20Te detector array at 77K with a silicon CCD multiplexer 在77K下用硅CCD多路复用器读出Pb0.80Sn0.20Te探测器阵列
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189468
P. Felix, J. Portmann, M. Moulin
{"title":"Readout of a Pb0.80Sn0.20Te detector array at 77K with a silicon CCD multiplexer","authors":"P. Felix, J. Portmann, M. Moulin","doi":"10.1109/IEDM.1978.189468","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189468","url":null,"abstract":"Presented are some experimental results on the readout of a Pb0.80Sn0.20Te six-detector array at 77 K, coupled in the direct injection mode to a silicon CCD multiplexer. A 65 % typical injection efficiency is measured, in good agreement with the theoretical value, estimated from the dynamic impedance of the detector, and the input MOS transistor's transconductance. The detectors are reverse-biased between 15 and 25 mV, which is consistent with the injection efficiency and the ± 9 mV threshold voltage dispersion of the electrical inputs. The modulation amplitude shows a ± 15 % dispersion. An equivalent detectivity in excess of 2 × 1010W-1cm Hz1/2is measured at a 10 micron wavelength, limited by the noise current in the input MOS transistors.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"237 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127399245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A punch-through isolated dynamic RAM cell 一个穿孔隔离动态RAM单元
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189426
G. Taylor, P. Chatterjee, H. Fu, A. Tasch
{"title":"A punch-through isolated dynamic RAM cell","authors":"G. Taylor, P. Chatterjee, H. Fu, A. Tasch","doi":"10.1109/IEDM.1978.189426","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189426","url":null,"abstract":"A novel dynamic RAM Cell concept is introduced. The operation, charge storage mechanism and layout of the cell are similar in essence to the VMOS RAM Cell [1]. The novelty is in the use of a punch-through mechanism to address the cell. This results in a planar cell which may be fabricated using regular NMOS technology. The cell structure has the potential for very high density, low leakage and charge capacity comparable to the normal one-transistor cell. Measurements on the cell are compared with those on a one-transistor cell.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114770760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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