砷辐射源效应

1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1978.189454

A. Wieder

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引用次数: 14

摘要

复合机制和带隙缩小效应已被证明对器件性能有显著影响。小型化设备的趋势更加强调了这些影响的重要性。然而，窄带效应只在硼的器件上测量过，还没有在n型材料的器件上测量过。然而，这些效应在发射体和亚集热器的重掺杂区域最为重要。

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Arsenic emitter effects

Recombination mechanisms and bandgap narrowing effects have proven to affect device performance significantly. The trend to minimum size devices stresses the significance of these effects even more so. Nevertheless bandgap narrowing effects have only been measured at devices for boron and not yet for n-type material. These effects, however, are of most interest in the heavily doped regions of emitters and subcollectors.

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来源期刊

1978 International Electron Devices Meeting

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