{"title":"锥形隔离动态增益RAM单元","authors":"P. Chatterjee, G. Taylor, M. Malwah","doi":"10.1109/IEDM.1978.189516","DOIUrl":null,"url":null,"abstract":"This paper describes a one-transistor only, ROM-like dynamic RAM cell, which operates on the principle of a dynamic change in gain or threshold of the device constituting the cell. There is no capacitor in this cell. This concept is radically different from the principle of operation of the conventional one-transistor storage memory cell, which actually consists of a storage capacitor in addition to one transistor, and which stores and senses a fixed charge packet.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Taper isolated dynamic gain RAM cell\",\"authors\":\"P. Chatterjee, G. Taylor, M. Malwah\",\"doi\":\"10.1109/IEDM.1978.189516\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a one-transistor only, ROM-like dynamic RAM cell, which operates on the principle of a dynamic change in gain or threshold of the device constituting the cell. There is no capacitor in this cell. This concept is radically different from the principle of operation of the conventional one-transistor storage memory cell, which actually consists of a storage capacitor in addition to one transistor, and which stores and senses a fixed charge packet.\",\"PeriodicalId\":164556,\"journal\":{\"name\":\"1978 International Electron Devices Meeting\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1978 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1978.189516\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1978 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1978.189516","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper describes a one-transistor only, ROM-like dynamic RAM cell, which operates on the principle of a dynamic change in gain or threshold of the device constituting the cell. There is no capacitor in this cell. This concept is radically different from the principle of operation of the conventional one-transistor storage memory cell, which actually consists of a storage capacitor in addition to one transistor, and which stores and senses a fixed charge packet.
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