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1978 International Electron Devices Meeting最新文献

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Some effects of base current on transistor switching and reverse-bias second breakdown 基极电流对晶体管开关和反偏置二次击穿的影响
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189508
D. Blackburn, D. Berning
{"title":"Some effects of base current on transistor switching and reverse-bias second breakdown","authors":"D. Blackburn, D. Berning","doi":"10.1109/IEDM.1978.189508","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189508","url":null,"abstract":"Some experimental observations of the switching characteristics and second breakdown susceptibility of high-voltage, fast-switching power transistors are discussed. A unique test circuit is described which permits devices to be taken into reverse-bias second breakdown many times with little or no apparent degradation. Evidence for the constriction of emitter current to the centers of the emitter fingers during the time associated with the extraction of stored charge is presented, three modes of reverse-bias second breakdown are shown, and reverse-bias safe-operating-area limits which have been nondestructively determined are shown.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"610 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116466875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
Electrically alterable hot-electron injection floating gate MOS memory cell with series enhancement 串联增强的可变热电子注入浮栅MOS存储电池
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189423
D. Guterman, I. Rimawi, R. D. Halvorson, D. McElroy, W. Chan
{"title":"Electrically alterable hot-electron injection floating gate MOS memory cell with series enhancement","authors":"D. Guterman, I. Rimawi, R. D. Halvorson, D. McElroy, W. Chan","doi":"10.1109/IEDM.1978.189423","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189423","url":null,"abstract":"An electrically alterable, floating gate, non-volatile memory transistor has been developed, having a cell area of under 500µ2, and using an advanced n-channel, polysilicon gate process. Cell programming occurs via hot-electron injection, exhibiting three distinct operating regimes. Erase, on the other hand is based on field emission from floating gate to control gate. The magnitude of electrical erase is determined by applied bias, device parameters and processing history, particularly the interlevel oxidation temperature. Analysis of experimental data shows that electrical erase does change programming characteristics significantly, and must be accounted for in circuit design. Memory retention, determined by thermal stress, is comparable to commercially available EPROMs. The memory cell exhibits better than 1000 cycle write/erase capability, with degradation in interlevel conduction being the principle factor limiting endurance. Read disturb is not a problem at 5V operation, but could become so at higher operating voltages.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117279765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
10 KW and up from a helix TWT? 10千瓦以上的螺旋行波管?
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189471
A. Jung
{"title":"10 KW and up from a helix TWT?","authors":"A. Jung","doi":"10.1109/IEDM.1978.189471","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189471","url":null,"abstract":"It is well known that wideband helix traveling wave tubes have been limited to peak power levels of several kilowatts, due to the occurrence of backward wave oscillations (BWO). Continuing advancements in TWT technology, however, have made this restriction a thing of the past. Octave bandwidth TWTs have been developed using helix pitch steps, diameter steps, or resonant loss for BWO stability. It would appear that peak power levels in excess of 50 kW are possible by using a combination of these approaches. This paper will first discuss the design and present performance data of a high peak power 10 kw, octave bandwidth, PPM-focused, conduction-cooled, helix TWT, in which \"resonant loss\" is the only oscillation suppression technique employed. Secondly, by extending this basic tube design, it will be shown that higher peak power levels can easily be achieved.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129555942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Geometry effects in VMOS transistors VMOS晶体管中的几何效应
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189344
I. S. Bhatti, R.Y. Yau
{"title":"Geometry effects in VMOS transistors","authors":"I. S. Bhatti, R.Y. Yau","doi":"10.1109/IEDM.1978.189344","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189344","url":null,"abstract":"Changes in the threshold and channel mobility of VMOS transistors due to device size have been reported. It is also shown that any VMOS transistor can be modeled as a combination of a minimum size device and a typical section of a large device. The influence of the geometry effects on weak inversion characteristics has been described.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130478722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electron guides with extraction, a potentially useful new class of electron devices 电子引导与萃取，一个潜在的有用的新型电子器件
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189403
C. Anderson, A. Pelios, T. Credelle, W. Siekanowicz, F. Vaccaro
{"title":"Electron guides with extraction, a potentially useful new class of electron devices","authors":"C. Anderson, A. Pelios, T. Credelle, W. Siekanowicz, F. Vaccaro","doi":"10.1109/IEDM.1978.189403","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189403","url":null,"abstract":"We at RCA have been exploring the possibility of constructing low voltage electrostatic periodic focusing structures for electrons which allow beam extraction at any period. These are the analogs to optical light pipes, where it should be noted that electrons can be deflected out of a guide relatively easily compared to deflecting light out of an optical fiber. Such devices can form the basis of a new class of cathodoluminescent displays. This paper will review the structures which have been proposed in the past primarily for traveling wave tubes and how they can be modified for beam extraction. The evolution of a beam of particles will be discussed using non-linear phase space transformations which conserve phase space volume. Finally some qualitative features of the spot profiles of extracted beams will be explained.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127633782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The OPFET: A new high speed optical detector OPFET:一种新型高速光学探测器
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189367
J. Gammel, J. Ballantyne
{"title":"The OPFET: A new high speed optical detector","authors":"J. Gammel, J. Ballantyne","doi":"10.1109/IEDM.1978.189367","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189367","url":null,"abstract":"A sensitive, high speed optical detector is needed for use in optical communications as well as for laboratory experiments. Recent experiments (1) have shown the GaAs MESFET to be potentially useful as a fast optical detector. We call this device an OPFET. This report summarizes new experimental results which show that the OPFET is both fast and sensitive and which identify the detection mechanism in this structure as photoconductivity. Calculations show that this device should give performance which exceeds that of PIN photo-diodes and rivals avalanche photodiodes. In addition, the structure is easy to integrate for use in optical circuits.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116713728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 48
High temperature operation of two-junction photovoltaic converters 双结光伏变流器的高温运行
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189400
K. Mitchell
{"title":"High temperature operation of two-junction photovoltaic converters","authors":"K. Mitchell","doi":"10.1109/IEDM.1978.189400","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189400","url":null,"abstract":"Multijunction solar cells can have important application in combined photovoltaic/thermal systems. Over one-third of industrial process heat is used at temperatures below 400° K. Optimized two-cell photovoltaic converters are predicted to have efficiencies up to 39 percent at 300° K and up to 29 percent at 450° K, thus maintaining high efficiencies at temperatures compatible with thermal applications. Operating the cells independently rather than in series provides no major gain in efficiency except where the cells would operate at different temperatures.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"14 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132791124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Fundamental material properties and substrate technology: Effects on achievable performance by compound semiconductor FET's 基本材料特性和衬底技术:对化合物半导体场效应管可实现性能的影响
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189373
J. Frey, T. Wada, J. Faricelli
{"title":"Fundamental material properties and substrate technology: Effects on achievable performance by compound semiconductor FET's","authors":"J. Frey, T. Wada, J. Faricelli","doi":"10.1109/IEDM.1978.189373","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189373","url":null,"abstract":"Two-dimensional analyses of InP and GaAs MESFET structures are used to explain relative magnitudes of parasitic element values observed in experimental InP MESFET's. Large drain-gate capacitance observed in InP is attributed mainly to substrate conduction, while large drain conductance at certain drain biases in InP is unavoidable due to large velocity dropback and large high-field diffusion in this material. Low Schottky barrier height and substrate conduction also increase gDand Cdg.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114185578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Liquid crystal flat display 液晶平板显示器
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189401
M. Hareng, S. Le Berre
{"title":"Liquid crystal flat display","authors":"M. Hareng, S. Le Berre","doi":"10.1109/IEDM.1978.189401","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189401","url":null,"abstract":"We present here a new principle of flat panel using a smectic A liquid crystal. It is a \"passive\" matrix working in a thermoelectric mode : at rest, the liquid crystal is transparent while is strongly scatters the light when it is heated by mean of one set of electrodes ; but if an electric field is applied on the liquid crystal, the intensity of the scattered light, decreases. We showed on a prototype that the addressing time of a line can be 60/us or less ; the relaxation times of the liquid crystal for both transitions transparent → scattering and the reverse is less than 2ms. So the frame change time can be adjust from 30ms to several seconds depending on the application. This smectic A matrix display which is simple to realize -as the \"passive\" matrices- presents characteristics for the contrast ratio, the resolution and the response times which, were only obtained with active matrices.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114558403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A model of punchthrough current in short-channel MOSFETs, from low to high injection levels 短沟道mosfet中从低注入电平到高注入电平的击穿电流模型
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189458
G. Merckel, J. Gautier
{"title":"A model of punchthrough current in short-channel MOSFETs, from low to high injection levels","authors":"G. Merckel, J. Gautier","doi":"10.1109/IEDM.1978.189458","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189458","url":null,"abstract":"It has been demonstrated that punchthrough operation of short-channel MOSFETs can be usefull for circuit applications [1][2]. The models which are generally used are valid either at low [1], or medium injection levels [3][4]. In this paper we present a model which describes the behavior of punchthrough current versus applied voltage, from low to high injection levels.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"449 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122849913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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