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1978 International Electron Devices Meeting最新文献

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Interspectral line noise and increased gains in coherent injection-locked TWT and IBCFA loop amplifiers 相干注入锁定行波管和IBCFA环路放大器的谱间线噪声和增益增加
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189439
G. Groshart, W. Friz, D. Miley
{"title":"Interspectral line noise and increased gains in coherent injection-locked TWT and IBCFA loop amplifiers","authors":"G. Groshart, W. Friz, D. Miley","doi":"10.1109/IEDM.1978.189439","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189439","url":null,"abstract":"Static and dynamic theories for the injection-locking of distributed linear beam microwave loop feedback oscillators are presented and verified by experimental results. The frequency lock range is inversely proportional to the product of the square root of the realized injection gain and the total loop length, while the characteristic time to acquire lock is directly proportional to that product. Loop phase variations in a lock condition are also magnified by the square root of the injection gain. The evolution of a dual mode X-band Injected Beam Crossed-Field Amplifier (IBCFA), designed for use as a multimode coherent radar transmitter, is discussed. Measurements of pulsed excess noise contributed by the CFA are presented. CFA excess noise is down better than 115 dBc/Hz at 2 kHz from a pulsed spectral line and that noise emanates from the beam supply. Excess pulsed noise with positive feedback and injection-locking increases in direct proportion to the injection gain.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123867673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Epitaxial Ge-GaAs X-band mixer diodes 外延Ge-GaAs x波段混频器二极管
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189515
A. Christou, J. Davey, Y. Anand
{"title":"Epitaxial Ge-GaAs X-band mixer diodes","authors":"A. Christou, J. Davey, Y. Anand","doi":"10.1109/IEDM.1978.189515","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189515","url":null,"abstract":"","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130087751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Lifetime profile measurements in heavily doped emitter structures using electron beams 用电子束测量重掺杂发射体结构的寿命剖面
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189419
G. Possin, M. Adler, B. Baliga
{"title":"Lifetime profile measurements in heavily doped emitter structures using electron beams","authors":"G. Possin, M. Adler, B. Baliga","doi":"10.1109/IEDM.1978.189419","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189419","url":null,"abstract":"An electron beam technique for depth profiling of minority carrier lifetime in heavily doped emitter structures is described. The method is based on generation of electron hole pairs at varying depths by an electron beam of variable energy. Modeling of the current flow equaitons is used to predict the dependance of collected current at the junction as a function of electron beam energy. Comparison of these model calculations to the experimental data shows that for the device studied the lifetime near the heavily doped surface is 10-8sec increasing as - 0.4 power of the net doping. This technique is complementary to emitter gain measurements which are most sensitive to lifetime near the junction.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127027977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Analytical determination of the thermal/mechanical performance of traveling wave tube electron guns 行波电子枪热力学性能的分析测定
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189377
R. Sawicki
{"title":"Analytical determination of the thermal/mechanical performance of traveling wave tube electron guns","authors":"R. Sawicki","doi":"10.1109/IEDM.1978.189377","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189377","url":null,"abstract":"The thermal/structural performance of electron guns has historically been overshadowed by electrical design constraints. However, with increased demands made upon the total performance, reliability and efficiency of electron guns, mechanical design considerations have become very important, often requiring complex analysis and design to obtain satisfactory results. To aid in the understanding and development of modern and improved electron guns, certain sophisticated computer analytical techniques have been developed. These techniques provide insight into a detailed knowledge of electron gun mechanical performance, information on developing efficient design, and a means by which complex system problems can be solved. Moreover, it allows this to be done in a timely and cost effective manner. This paper will present a description of these analytical techniques and how they may be used to understand and improve electron gun thermal/structural performance.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127069620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Be implanted InGaAsP avalanche photodiode 植入InGaAsP雪崩光电二极管
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189366
H. Law, L. Tomasetta, K. Nakano
{"title":"Be implanted InGaAsP avalanche photodiode","authors":"H. Law, L. Tomasetta, K. Nakano","doi":"10.1109/IEDM.1978.189366","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189366","url":null,"abstract":"High quantum efficiency planar and mesa InGaAsP avalanche photodiodes have been fabricated by beryllium ion implantation. The implanted diodes, after suitable annealing, exhibited a very low dark current density of 4.0×10-6A/cm2at 10 V. The devices have 65% external quantum efficiency at 1.06µm without an anti-reflection coating and a uniform avalanche gain of 12.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125493373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Gallium arsenide hyperabrupt tuning varactors 砷化镓超突变调谐变容管
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189413
J. Heaton, R. S. Posner, T. Ramachandran, R. E. Walline
{"title":"Gallium arsenide hyperabrupt tuning varactors","authors":"J. Heaton, R. S. Posner, T. Ramachandran, R. E. Walline","doi":"10.1109/IEDM.1978.189413","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189413","url":null,"abstract":"Hyperabrupt gallium arsenide tuning varactors have been constructed using vapor phase grown epitaxial gallium arsenide of low-high-low doping profile. Both platinum Schottky and p-n junction devices have been studied. The varactors have exhibited 50 MHz Q at 4 volts reverse bias in excess of 5000, tuning ratios from zero bias to breakdown in excess of 13 to 1, and have been useful in providing linear tuning of an X-band Gunn diode voltage controlled oscillator (VCO). Fine grain tuning linearity and harmonic generation have been studied.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126602796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
High speed bipolar process with full ion implantation and self-aligned contact structure 具有全离子注入和自对准接触结构的高速双极工艺
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189384
Y. Akasaka, K. Tsukamoto, T. Sakurai, T. Hirao, Y. Horiba, K. Kijima, H. Nakata
{"title":"High speed bipolar process with full ion implantation and self-aligned contact structure","authors":"Y. Akasaka, K. Tsukamoto, T. Sakurai, T. Hirao, Y. Horiba, K. Kijima, H. Nakata","doi":"10.1109/IEDM.1978.189384","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189384","url":null,"abstract":"Technology for the fabrication of fully ion implanted ECL RAM with arsenic buried collector, boron base and arsenic implanted self-aligned contact (ISAC) emitter is developed combined with dielectric isolation technology, N-type epitaxy and conventional two level metallization. Typical gate delay time tpdis obtained of 0.5 ns with a switching current of 1 mA and 0.9 ns with 0.25 mA from 5-stage ECL ring oscillators. Address access time of 10 ns and a power dissipation of 350 mW are obtained with 1k-bit RAM in ECL version.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127867332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Micromechanical voltage controlled switches and circuits 微机械电压控制开关和电路
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189362
K. Petersen
{"title":"Micromechanical voltage controlled switches and circuits","authors":"K. Petersen","doi":"10.1109/IEDM.1978.189362","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189362","url":null,"abstract":"Micromechanical devices and circuits have been fabricated in which a thin (3500 Å) metal-coated SiO2membrane, ∼76 µm long, is suspended over a 7 µm deep well anisotropically etched in oriented crystalline silicon. Additional raised structures formed by gold plating are attached to the membrane such that an electrical switching function is accomplished when the membrane is electrostatically deflected downward into the well. Switching times of less than 40 µsec have been observed at deflection voltages of about 60 V in this preliminary design The very high off/on state impedance ratios of these devices suggest applications in the areas of analog signal switching and charge storage related to optical image storage. Fabrication and operation of these devices and circuits are described, and more complex implementations of this new technology are discussed.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127710675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Optimum short-channel MOS device design for high performance VLSI 高性能VLSI的最佳短通道MOS器件设计
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189456
K. W. Yeh, J. Reuter, D. Heald, V. Dhaka, A. Rangappan
{"title":"Optimum short-channel MOS device design for high performance VLSI","authors":"K. W. Yeh, J. Reuter, D. Heald, V. Dhaka, A. Rangappan","doi":"10.1109/IEDM.1978.189456","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189456","url":null,"abstract":"Modeling of double-boron implanted devices with channel length down to 1 µ m is described. An optimum choice of device and process parameters reduces the channel length sensitivity of threshold voltage from 0.1v/µm using single channel implant to 0.05v/µm and a corresponding punch-through sensitivity reduction from 7v/µm to 1.5v/µm. Both are measured at a channel length of 2.5µm and with a substrate bias of 2.5v. A new figure of merit, (speed) (density) product will also be introduced as a vehicle for identifying the speedy density and power trade off on the optimization of operating voltage.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130486039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
The performance of GaAs logic gates in LSI 大规模集成电路中砷化镓逻辑门的性能
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189387
P. Solomon
{"title":"The performance of GaAs logic gates in LSI","authors":"P. Solomon","doi":"10.1109/IEDM.1978.189387","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189387","url":null,"abstract":"This paper examines the theoretical performance of GaAs MESFET logic gates and attempts to obtain a realistic comparison of GaAs vs Si devices under typical loading conditions imposed by large random logic arrays. GaAs was found to have a speed advantage of 3-6 over Si, depending on the operating voltage. Normally off type MESFET devices were attractive at gate lengths of 0.5µm, giving loaded delays of 105ps. Logic swings were 600mV requiring a threshold voltage control of ±50mV.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132894792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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