J. Heaton, R. S. Posner, T. Ramachandran, R. E. Walline
{"title":"砷化镓超突变调谐变容管","authors":"J. Heaton, R. S. Posner, T. Ramachandran, R. E. Walline","doi":"10.1109/IEDM.1978.189413","DOIUrl":null,"url":null,"abstract":"Hyperabrupt gallium arsenide tuning varactors have been constructed using vapor phase grown epitaxial gallium arsenide of low-high-low doping profile. Both platinum Schottky and p-n junction devices have been studied. The varactors have exhibited 50 MHz Q at 4 volts reverse bias in excess of 5000, tuning ratios from zero bias to breakdown in excess of 13 to 1, and have been useful in providing linear tuning of an X-band Gunn diode voltage controlled oscillator (VCO). Fine grain tuning linearity and harmonic generation have been studied.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Gallium arsenide hyperabrupt tuning varactors\",\"authors\":\"J. Heaton, R. S. Posner, T. Ramachandran, R. E. Walline\",\"doi\":\"10.1109/IEDM.1978.189413\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Hyperabrupt gallium arsenide tuning varactors have been constructed using vapor phase grown epitaxial gallium arsenide of low-high-low doping profile. Both platinum Schottky and p-n junction devices have been studied. The varactors have exhibited 50 MHz Q at 4 volts reverse bias in excess of 5000, tuning ratios from zero bias to breakdown in excess of 13 to 1, and have been useful in providing linear tuning of an X-band Gunn diode voltage controlled oscillator (VCO). Fine grain tuning linearity and harmonic generation have been studied.\",\"PeriodicalId\":164556,\"journal\":{\"name\":\"1978 International Electron Devices Meeting\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1978 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1978.189413\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1978 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1978.189413","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Hyperabrupt gallium arsenide tuning varactors have been constructed using vapor phase grown epitaxial gallium arsenide of low-high-low doping profile. Both platinum Schottky and p-n junction devices have been studied. The varactors have exhibited 50 MHz Q at 4 volts reverse bias in excess of 5000, tuning ratios from zero bias to breakdown in excess of 13 to 1, and have been useful in providing linear tuning of an X-band Gunn diode voltage controlled oscillator (VCO). Fine grain tuning linearity and harmonic generation have been studied.
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