Y. Akasaka, K. Tsukamoto, T. Sakurai, T. Hirao, Y. Horiba, K. Kijima, H. Nakata
{"title":"具有全离子注入和自对准接触结构的高速双极工艺","authors":"Y. Akasaka, K. Tsukamoto, T. Sakurai, T. Hirao, Y. Horiba, K. Kijima, H. Nakata","doi":"10.1109/IEDM.1978.189384","DOIUrl":null,"url":null,"abstract":"Technology for the fabrication of fully ion implanted ECL RAM with arsenic buried collector, boron base and arsenic implanted self-aligned contact (ISAC) emitter is developed combined with dielectric isolation technology, N-type epitaxy and conventional two level metallization. Typical gate delay time tpdis obtained of 0.5 ns with a switching current of 1 mA and 0.9 ns with 0.25 mA from 5-stage ECL ring oscillators. Address access time of 10 ns and a power dissipation of 350 mW are obtained with 1k-bit RAM in ECL version.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"High speed bipolar process with full ion implantation and self-aligned contact structure\",\"authors\":\"Y. Akasaka, K. Tsukamoto, T. Sakurai, T. Hirao, Y. Horiba, K. Kijima, H. Nakata\",\"doi\":\"10.1109/IEDM.1978.189384\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Technology for the fabrication of fully ion implanted ECL RAM with arsenic buried collector, boron base and arsenic implanted self-aligned contact (ISAC) emitter is developed combined with dielectric isolation technology, N-type epitaxy and conventional two level metallization. Typical gate delay time tpdis obtained of 0.5 ns with a switching current of 1 mA and 0.9 ns with 0.25 mA from 5-stage ECL ring oscillators. Address access time of 10 ns and a power dissipation of 350 mW are obtained with 1k-bit RAM in ECL version.\",\"PeriodicalId\":164556,\"journal\":{\"name\":\"1978 International Electron Devices Meeting\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1978 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1978.189384\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1978 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1978.189384","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High speed bipolar process with full ion implantation and self-aligned contact structure
Technology for the fabrication of fully ion implanted ECL RAM with arsenic buried collector, boron base and arsenic implanted self-aligned contact (ISAC) emitter is developed combined with dielectric isolation technology, N-type epitaxy and conventional two level metallization. Typical gate delay time tpdis obtained of 0.5 ns with a switching current of 1 mA and 0.9 ns with 0.25 mA from 5-stage ECL ring oscillators. Address access time of 10 ns and a power dissipation of 350 mW are obtained with 1k-bit RAM in ECL version.
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