High speed bipolar process with full ion implantation and self-aligned contact structure

Abstract

Technology for the fabrication of fully ion implanted ECL RAM with arsenic buried collector, boron base and arsenic implanted self-aligned contact (ISAC) emitter is developed combined with dielectric isolation technology, N-type epitaxy and conventional two level metallization. Typical gate delay time tpdis obtained of 0.5 ns with a switching current of 1 mA and 0.9 ns with 0.25 mA from 5-stage ECL ring oscillators. Address access time of 10 ns and a power dissipation of 350 mW are obtained with 1k-bit RAM in ECL version.