大规模集成电路中砷化镓逻辑门的性能

1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1978.189387

P. Solomon

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引用次数: 3

摘要

本文研究了GaAs MESFET逻辑门的理论性能，并试图在大型随机逻辑阵列施加的典型负载条件下获得GaAs与Si器件的实际比较。根据工作电压的不同，砷化镓比硅具有3-6的速度优势。通常关闭型MESFET器件在栅极长度为0.5µm时具有吸引力，负载延迟为105ps。逻辑摆幅为600mV，要求阈值电压控制为±50mV。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The performance of GaAs logic gates in LSI

This paper examines the theoretical performance of GaAs MESFET logic gates and attempts to obtain a realistic comparison of GaAs vs Si devices under typical loading conditions imposed by large random logic arrays. GaAs was found to have a speed advantage of 3-6 over Si, depending on the operating voltage. Normally off type MESFET devices were attractive at gate lengths of 0.5µm, giving loaded delays of 105ps. Logic swings were 600mV requiring a threshold voltage control of ±50mV.

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来源期刊

1978 International Electron Devices Meeting

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