Be implanted InGaAsP avalanche photodiode

1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1978.189366

H. Law, L. Tomasetta, K. Nakano

引用次数: 0

Abstract

High quantum efficiency planar and mesa InGaAsP avalanche photodiodes have been fabricated by beryllium ion implantation. The implanted diodes, after suitable annealing, exhibited a very low dark current density of 4.0×10-6A/cm2at 10 V. The devices have 65% external quantum efficiency at 1.06µm without an anti-reflection coating and a uniform avalanche gain of 12.

查看原文本刊更多论文

植入InGaAsP雪崩光电二极管

利用铍离子注入制备了高量子效率的平面和台面InGaAsP雪崩光电二极管。经过适当的退火后，植入二极管在10 V时的暗电流密度非常低，为4.0×10-6A/cm2。该器件在1.06 μ m处具有65%的外量子效率，无增透涂层，雪崩增益均匀为12。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

1978 International Electron Devices Meeting

自引率

0.00%

发文量