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1978 International Electron Devices Meeting最新文献

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Fine line lithography systems for VLSI 用于VLSI的细线光刻系统
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189338
A. Broers
{"title":"Fine line lithography systems for VLSI","authors":"A. Broers","doi":"10.1109/IEDM.1978.189338","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189338","url":null,"abstract":"This paper discusses advantages and disadvantages of advanced lithography techniques under investigation for the fabrication of semiconductor integrated circuits. These techniques are replacing conventional ultra-violet (UV) contact/proximity printing. They employ standard UV radiation (λ = 3500Å-4000ÅA), deep UV radiation (λ = 2000Å-2600Å), soft x-rays (λ = 4Å-40Å), and electrons. It is assumed that the reader is familiar with the basic principles of the new methods.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132180535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Design of TED's for frequency divider applications 分频器应用的TED设计
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189411
L. M. Tichauer, T. Mills, D. Dodson
{"title":"Design of TED's for frequency divider applications","authors":"L. M. Tichauer, T. Mills, D. Dodson","doi":"10.1109/IEDM.1978.189411","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189411","url":null,"abstract":"Analog devices in frequency divider applications must be designed to a specific frequency value within ±2%. This design goal has been achieved using a computer aided design and with a unique adaptation of the existing theoretical models. The design approach has also been experimentally verified.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122698051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sub-micron polysilicon Gate CMOS/SOS technology 亚微米多晶硅栅CMOS/SOS技术
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189348
A. Ipri
{"title":"Sub-micron polysilicon Gate CMOS/SOS technology","authors":"A. Ipri","doi":"10.1109/IEDM.1978.189348","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189348","url":null,"abstract":"A process sequence incorporating the lateral diffusion of Boron into polycrystalline silicon for the fabrication of CMOS/SOS transistors and integrated circuits is described. The resulting polysilicon gate dimensions and channel lengths are typically between 0.2 µm and 2.0 µm. Yield values associated with these narrow polysilicon lines are shown to be equal to present 5 µm yield values. Ring oscillators have been fabricated having 0.5 µm channel lengths which exhibit propagation delays of 200 ps at 5v. In addition, 10 stage dynamic binary counters have also been fabricated having 0.5 µm channel lengths and a maximum input frequency of 600 MHz at 12v and 200 mW was attained.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122850994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
SEM measurement of diffusion lengths, recombination velocity, and junction collection efficiency in heterojunction solar cells: Application to CuxS/CdS 异质结太阳能电池中扩散长度、复合速度和结收集效率的SEM测量:在CuxS/CdS中的应用
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189396
L. Partain, S. Shea
{"title":"SEM measurement of diffusion lengths, recombination velocity, and junction collection efficiency in heterojunction solar cells: Application to CuxS/CdS","authors":"L. Partain, S. Shea","doi":"10.1109/IEDM.1978.189396","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189396","url":null,"abstract":"Existing theory for scanning electron microscope (SEM) measurement of diffusion length and surface recombination velocity in P-N junctions has been extended to apply when space charge region (SCR) recombination and energy losses occur. Such phenomena are important in heterojunction devices. When applied to SEM data taken on CuxS/CdS solar cells as a function of air heat treatment time at 120°C, this analysis showed dramatic changes occurring in the junction collection efficiency but no significant changes in diffusion lengths or surface recombination velocity. This indicates that SCR phenomena play a major role in the evolution of these devices' performance with heating.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127836377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design concepts for an octave-bandwidth coupled-cavity TWT 八倍频宽耦合腔行波管的设计概念
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189475
A. Karp, W. R. Ayers
{"title":"Design concepts for an octave-bandwidth coupled-cavity TWT","authors":"A. Karp, W. R. Ayers","doi":"10.1109/IEDM.1978.189475","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189475","url":null,"abstract":"To obtain an octave of instantaneous bandwidth in a coupled-cavity TWT, the circuit must exhibit sufficiently low dispersion over a corresponding \"cold\" bandwidth. Gain flatness over the \"hot\" bandwidth must also be assured along with electronic stability. Design concepts capable of meeting these needs, and supported by analytical and cold-test results, are introduced. A coupled-cavity structure meeting the cold-bandwidth and dispersion requirements was developed with little difficulty. Within the band, a 2π-point backward-waye instability requires suppression by nonreciprocal means. Ferrimagnetic spheres internal to the circuit can promote stability through a combination of backward-wave absorption and diminished backward-wave Pierce impedance near the selected frequency. Alternatively, novel external circuitry directionally coupled to the side of the TWT can create an effective \"sever\" affecting only backward waves at the selected frequency.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"4 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127986553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Microwave semiconductor devices: State-of-the-art and limiting effects 微波半导体器件:最新技术和限制效应
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189429
L. Eastman
{"title":"Microwave semiconductor devices: State-of-the-art and limiting effects","authors":"L. Eastman","doi":"10.1109/IEDM.1978.189429","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189429","url":null,"abstract":"The present state of the art of microwave semiconductor devices is presented, along with electronic, physical, and technological limiting effects. Means of advancing the state of the art are also presented.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129004533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
J-band performance of 300 nm gate length GaAs FETs 300nm栅长GaAs fet的j波段性能
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189371
R. Butlin, A. J. Hughes, R. Bennett, D. Parker, J. Turner
{"title":"J-band performance of 300 nm gate length GaAs FETs","authors":"R. Butlin, A. J. Hughes, R. Bennett, D. Parker, J. Turner","doi":"10.1109/IEDM.1978.189371","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189371","url":null,"abstract":"Present noise theories","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116659078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Two-dimensional calculation of avalanche breakdown voltage in deeply-depleted MOS capacitors 深耗尽MOS电容器雪崩击穿电压的二维计算
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189347
A. Rusu, C. Bulucea
{"title":"Two-dimensional calculation of avalanche breakdown voltage in deeply-depleted MOS capacitors","authors":"A. Rusu, C. Bulucea","doi":"10.1109/IEDM.1978.189347","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189347","url":null,"abstract":"Two-dimensional computer calculations of the deep-depletion avalanche breakdown voltage are presented for Si-SiO<inf>2</inf>MOS capacitors covering the range of substrate doping between 10<sup>14</sup>and 10<sup>18</sup>cm<sup>-3</sup>and oxide thickness between 0.01 and 5.00 µm. The results are applied to explain and quantitatively characterize the breakdown voltage collapse experimentally observed in the high-voltage range of the breakdown voltage characteristic of 0.3 and 1.0 µm-oxide gate-controlled diodes.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117264580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nondestructive diagnosis of thick production-line microelectronic components using transmission acoustic microscope 透射声显微镜在厚生产线微电子元件无损诊断中的应用
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189451
J. Wang, C. Lee, C. Tsai
{"title":"Nondestructive diagnosis of thick production-line microelectronic components using transmission acoustic microscope","authors":"J. Wang, C. Lee, C. Tsai","doi":"10.1109/IEDM.1978.189451","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189451","url":null,"abstract":"We have employed a 150 MHz transmission acoustic microscope to study the bonded regions of three additional types of thick production line hybrid microelectronic components, namely, high power silicon transistors, thin- and thick-film circuits, and multilayer chip-capacitors. We have detected defects located deep inside these components and have succeeded in identifying and characterizing some of the defects such as alloy spikes, inclusions, voids, and lack of bonds.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127614472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
High-density, buried-contact CMOS/SOS static RAM's 高密度、埋接触CMOS/SOS静态RAM
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189385
A. Dingwall, R. Stewart, B. Leung, R. Stricker
{"title":"High-density, buried-contact CMOS/SOS static RAM's","authors":"A. Dingwall, R. Stewart, B. Leung, R. Stricker","doi":"10.1109/IEDM.1978.189385","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189385","url":null,"abstract":"A new 'buried-contact' CMOS/SOS technology allows fabrication of dense static memory cells. This technology has been applied to a family of 1K, 4K, and 16K low power static Random Access Memories based upon an 1140µ2cell. Static memory cells as small as 540µ2have, however, been successfully fabricated making such static cells the smallest yet reported.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126568590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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