深耗尽MOS电容器雪崩击穿电压的二维计算

1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1978.189347

A. Rusu, C. Bulucea

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引用次数: 0

摘要

本文给出了Si-SiO2MOS电容器深耗尽雪崩击穿电压的二维计算机计算，其衬底掺杂范围为1014 ~ 1018cm-3，氧化物厚度为0.01 ~ 5.00µm。该结果用于解释和定量表征在高压范围内实验观察到的0.3µm和1.0µm氧化栅控二极管击穿电压特性的击穿电压坍塌。

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Two-dimensional calculation of avalanche breakdown voltage in deeply-depleted MOS capacitors

Two-dimensional computer calculations of the deep-depletion avalanche breakdown voltage are presented for Si-SiO2MOS capacitors covering the range of substrate doping between 10¹⁴and 10¹⁸cm^-3and oxide thickness between 0.01 and 5.00 µm. The results are applied to explain and quantitatively characterize the breakdown voltage collapse experimentally observed in the high-voltage range of the breakdown voltage characteristic of 0.3 and 1.0 µm-oxide gate-controlled diodes.

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1978 International Electron Devices Meeting

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