用于VLSI的细线光刻系统

1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1978.189338

A. Broers

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引用次数: 4

摘要

本文讨论了目前正在研究的用于半导体集成电路制造的先进光刻技术的优缺点。这些技术正在取代传统的紫外线(UV)接触/接近印刷。它们使用标准紫外辐射(λ = 3500Å-4000ÅA)、深紫外辐射(λ = 2000Å-2600Å)、软x射线(λ = 4Å-40Å)和电子。假定读者熟悉新方法的基本原理。

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Fine line lithography systems for VLSI

This paper discusses advantages and disadvantages of advanced lithography techniques under investigation for the fabrication of semiconductor integrated circuits. These techniques are replacing conventional ultra-violet (UV) contact/proximity printing. They employ standard UV radiation (λ = 3500Å-4000ÅA), deep UV radiation (λ = 2000Å-2600Å), soft x-rays (λ = 4Å-40Å), and electrons. It is assumed that the reader is familiar with the basic principles of the new methods.

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来源期刊

1978 International Electron Devices Meeting

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