High-density, buried-contact CMOS/SOS static RAM's

Abstract

A new 'buried-contact' CMOS/SOS technology allows fabrication of dense static memory cells. This technology has been applied to a family of 1K, 4K, and 16K low power static Random Access Memories based upon an 1140µ2cell. Static memory cells as small as 540µ2have, however, been successfully fabricated making such static cells the smallest yet reported.