{"title":"Two-dimensional calculation of avalanche breakdown voltage in deeply-depleted MOS capacitors","authors":"A. Rusu, C. Bulucea","doi":"10.1109/IEDM.1978.189347","DOIUrl":null,"url":null,"abstract":"Two-dimensional computer calculations of the deep-depletion avalanche breakdown voltage are presented for Si-SiO<inf>2</inf>MOS capacitors covering the range of substrate doping between 10<sup>14</sup>and 10<sup>18</sup>cm<sup>-3</sup>and oxide thickness between 0.01 and 5.00 µm. The results are applied to explain and quantitatively characterize the breakdown voltage collapse experimentally observed in the high-voltage range of the breakdown voltage characteristic of 0.3 and 1.0 µm-oxide gate-controlled diodes.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1978 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1978.189347","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Two-dimensional computer calculations of the deep-depletion avalanche breakdown voltage are presented for Si-SiO2MOS capacitors covering the range of substrate doping between 1014and 1018cm-3and oxide thickness between 0.01 and 5.00 µm. The results are applied to explain and quantitatively characterize the breakdown voltage collapse experimentally observed in the high-voltage range of the breakdown voltage characteristic of 0.3 and 1.0 µm-oxide gate-controlled diodes.
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