{"title":"高密度、埋接触CMOS/SOS静态RAM","authors":"A. Dingwall, R. Stewart, B. Leung, R. Stricker","doi":"10.1109/IEDM.1978.189385","DOIUrl":null,"url":null,"abstract":"A new 'buried-contact' CMOS/SOS technology allows fabrication of dense static memory cells. This technology has been applied to a family of 1K, 4K, and 16K low power static Random Access Memories based upon an 1140µ2cell. Static memory cells as small as 540µ2have, however, been successfully fabricated making such static cells the smallest yet reported.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"High-density, buried-contact CMOS/SOS static RAM's\",\"authors\":\"A. Dingwall, R. Stewart, B. Leung, R. Stricker\",\"doi\":\"10.1109/IEDM.1978.189385\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new 'buried-contact' CMOS/SOS technology allows fabrication of dense static memory cells. This technology has been applied to a family of 1K, 4K, and 16K low power static Random Access Memories based upon an 1140µ2cell. Static memory cells as small as 540µ2have, however, been successfully fabricated making such static cells the smallest yet reported.\",\"PeriodicalId\":164556,\"journal\":{\"name\":\"1978 International Electron Devices Meeting\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1978 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1978.189385\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1978 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1978.189385","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new 'buried-contact' CMOS/SOS technology allows fabrication of dense static memory cells. This technology has been applied to a family of 1K, 4K, and 16K low power static Random Access Memories based upon an 1140µ2cell. Static memory cells as small as 540µ2have, however, been successfully fabricated making such static cells the smallest yet reported.
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