Fine line lithography systems for VLSI

Abstract

This paper discusses advantages and disadvantages of advanced lithography techniques under investigation for the fabrication of semiconductor integrated circuits. These techniques are replacing conventional ultra-violet (UV) contact/proximity printing. They employ standard UV radiation (λ = 3500Å-4000ÅA), deep UV radiation (λ = 2000Å-2600Å), soft x-rays (λ = 4Å-40Å), and electrons. It is assumed that the reader is familiar with the basic principles of the new methods.