{"title":"植入InGaAsP雪崩光电二极管","authors":"H. Law, L. Tomasetta, K. Nakano","doi":"10.1109/IEDM.1978.189366","DOIUrl":null,"url":null,"abstract":"High quantum efficiency planar and mesa InGaAsP avalanche photodiodes have been fabricated by beryllium ion implantation. The implanted diodes, after suitable annealing, exhibited a very low dark current density of 4.0×10-6A/cm2at 10 V. The devices have 65% external quantum efficiency at 1.06µm without an anti-reflection coating and a uniform avalanche gain of 12.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Be implanted InGaAsP avalanche photodiode\",\"authors\":\"H. Law, L. Tomasetta, K. Nakano\",\"doi\":\"10.1109/IEDM.1978.189366\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High quantum efficiency planar and mesa InGaAsP avalanche photodiodes have been fabricated by beryllium ion implantation. The implanted diodes, after suitable annealing, exhibited a very low dark current density of 4.0×10-6A/cm2at 10 V. The devices have 65% external quantum efficiency at 1.06µm without an anti-reflection coating and a uniform avalanche gain of 12.\",\"PeriodicalId\":164556,\"journal\":{\"name\":\"1978 International Electron Devices Meeting\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1978 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1978.189366\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1978 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1978.189366","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High quantum efficiency planar and mesa InGaAsP avalanche photodiodes have been fabricated by beryllium ion implantation. The implanted diodes, after suitable annealing, exhibited a very low dark current density of 4.0×10-6A/cm2at 10 V. The devices have 65% external quantum efficiency at 1.06µm without an anti-reflection coating and a uniform avalanche gain of 12.
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