A model of punchthrough current in short-channel MOSFETs, from low to high injection levels

Abstract

It has been demonstrated that punchthrough operation of short-channel MOSFETs can be usefull for circuit applications [1][2]. The models which are generally used are valid either at low [1], or medium injection levels [3][4]. In this paper we present a model which describes the behavior of punchthrough current versus applied voltage, from low to high injection levels.