短沟道mosfet中从低注入电平到高注入电平的击穿电流模型

1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1978.189458

G. Merckel, J. Gautier

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引用次数: 2

摘要

已经证明，短沟道mosfet的穿孔操作可以用于电路应用[1][2]。通常使用的模型在低[1]或中注入水平[3][4]下都是有效的。在本文中，我们提出了一个模型，该模型描述了从低到高注入水平的穿孔电流与外加电压的关系。

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A model of punchthrough current in short-channel MOSFETs, from low to high injection levels

It has been demonstrated that punchthrough operation of short-channel MOSFETs can be usefull for circuit applications [1][2]. The models which are generally used are valid either at low [1], or medium injection levels [3][4]. In this paper we present a model which describes the behavior of punchthrough current versus applied voltage, from low to high injection levels.

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来源期刊

1978 International Electron Devices Meeting

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