{"title":"VMOS晶体管中的几何效应","authors":"I. S. Bhatti, R.Y. Yau","doi":"10.1109/IEDM.1978.189344","DOIUrl":null,"url":null,"abstract":"Changes in the threshold and channel mobility of VMOS transistors due to device size have been reported. It is also shown that any VMOS transistor can be modeled as a combination of a minimum size device and a typical section of a large device. The influence of the geometry effects on weak inversion characteristics has been described.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Geometry effects in VMOS transistors\",\"authors\":\"I. S. Bhatti, R.Y. Yau\",\"doi\":\"10.1109/IEDM.1978.189344\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Changes in the threshold and channel mobility of VMOS transistors due to device size have been reported. It is also shown that any VMOS transistor can be modeled as a combination of a minimum size device and a typical section of a large device. The influence of the geometry effects on weak inversion characteristics has been described.\",\"PeriodicalId\":164556,\"journal\":{\"name\":\"1978 International Electron Devices Meeting\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1978 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1978.189344\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1978 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1978.189344","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Changes in the threshold and channel mobility of VMOS transistors due to device size have been reported. It is also shown that any VMOS transistor can be modeled as a combination of a minimum size device and a typical section of a large device. The influence of the geometry effects on weak inversion characteristics has been described.
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