Nitride-based passivation of GaAs for reduced surface state density

Abstract

Nitride-based passivation of GaAs has been intended. Gallium oxy-nitride film was deposited by reactive sputtering with optimum oxygen incorporation into the film for the non-dispersive behavior of capacitance of the insulator film itself. The removal of native oxide from GaAs surface by sputter-etching with nitrogen resulted in the disappearance of anomalous frequency dispersion in the accumulation region of n-GaAs MIS structure, which is observed with native oxide deposited by anodic oxidation in electrolyte or gas plasma, and in the interface state density of the order of 1011cm-2eV-1.