重掺杂平面二极管中的载流子复合

1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1978.189420

G. Possin, C. Kirkpatrick

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引用次数: 0

摘要

介绍了一种制备表面掺杂量大、收集效率高的浅pn结器件的工艺。电子束技术用于测量收集效率作为深度的函数，并通过在二极管上制作的MOS电容器调制表面复合速度。这些研究结果表明，表面复合是载流子损失的主要影响因素。

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Carrier recombination in heavily doped planar diodes

A process is described which produces a shallow pn junction device with heavy surface doping and very high collection efficiency. Electron beam techniques were used to measure collection efficiency as a function of depth and to modulate the surface recombination velocity through an MOS capacitor fabricated on the diode. The results of these studies indicate that surface recombination is the dominant effect on carrier loss.

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1978 International Electron Devices Meeting

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