Infrared HgCdTe photovoltaic detectors by planar technology

Abstract

Following years of intensive research and development (1) , (2) , (3) , (4), HgCdTe photovoltaic detectors (photodiodes) have found definite acceptance for infrared detection for commercial and military applications. Many infrared imaging and detection systems operating in the 8 to 12 µm wavelength region and developed during the past few years have almost exclusively incorporated this detector type. A number of infrared systems, particularly in the imaging area, will soon experience an increased development effort to respond to the various needs, in particular, for military night vision. The need for large-scale fabrication can, therefore, be foreseen in the years ahead. In order to be cost-efficient, production must lean toward integrated circuit fabrication techniques. It is, therefore, proper to consider planar technology. From among the two basic detection modes (photovoltaic and photoconductive), only the former responds to these requirements.