高辐照度IRED光纤的辐射耦合分析

G. Berkstresser, V. Keramidas
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摘要

提出了一种描述高辐照度红外辐射在光纤中耦合的模型。应用该模型来判断结电流密度分布、二极管窗口层厚度和二极管表面粗糙度对光纤耦合效率的影响。二极管窗口介质与光纤芯之间的传输系数很大程度上取决于发射表面是光滑还是粗糙。这就需要两种不同的方法来处理穿过窗口层的辐射通量。粗糙的表面使入射辐射随机化。因此,将窗口层通量处理推广到计算结平面上所有同心环隙对表面环隙的通量贡献。光滑的表面在一个小的立体角内透射到二极管表面。因此,通量传递与从结平面中相应位置发射的辐射成正比。利用上述模型对IRED源和光纤汇的几种组合进行了处理。对于粗糙表面的二极管,磁通通过层的系数是主要因素,并有很强的依赖于窗口层厚度。对于光滑表面二极管,通过二极管到光纤界面的传输系数占主导地位,对层厚度的依赖性较弱。随着窗口厚度的减小,两种表面的通量系数趋于一致,界面透射系数占总耦合效率的主导地位。根据观察到的Ga1-xAlxAS - GaAs单异质结IRED的相对表面亮度分布对模型进行了测试。通过改变有源层厚度来改变电流拥挤程度,揭示了光滑表面模型,可以更准确地预测二极管的相对性能。由于窗口层变薄,耦合到光纤中的光功率的灵敏度降低,进一步证实了这一判断。利用这种光耦合特性的处理方法,可以评估诸如二极管几何形状、结构电性能和表面特性等参数的影响。给出了对刻蚀井窗或厚窗平面高辐射二极管性能评价的实例。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analysis of radiation coupling from high radiance IRED into an optical fiber
A model is presented to describe coupling of radiation from high radiance IREDs into an optical fiber. This model is applied to judge the effects of junction current density distribution, thickness of the diode window layer, and roughness of the diode surface upon the coupling efficiency into a fiber. The transmission coefficient between the diode window media and the fiber core depends strongly on whether the emitting surface is rough or smooth. This necessitates two separate approaches for treating the radiation flux across the window layer. A rough surface randomizes incident radiation. Thus, a window layer flux treatment is generalized to evaluate the flux contributions to an annulus in the surface plane from all concentric annulii which lie in the junction plane. A smooth surface transmits within a small solid angle of incidence to the diode surface. Thus, the flux transfer is proportional to the emitted radiation from the corresponding position in the junction plane. Several combinations of the IRED source and fiber sink were treated with the above models. For a rough surface diode the flux transmission coefficient across the layer is the dominant factor and there is a strong dependence on the window layer thickness. For a smooth surface diode the transmission coefficient across the diode to fiber interface is dominate and there is only a weak dependence upon the layer thickness. As the window thickness is reduced the flux coefficient for either type of surface approaches unity, and the interface transmission coefficient dominates the total coupling efficiency. The models were tested against observed relative surface brightness distributions for Ga1-xAlxAS -- GaAs single heterojunction IRED. Changing the degree of current crowding by variations of the active layer thickness reveal the smooth surface model to more correctly predict the relative performance, of the diodes. This judgment is further confirmed by a lack of sensitivity in the optical power coupled into a fiber as the window layer is thinned. Using this treatment of the optical coupling characteristics the effects of parameters such as diode geometry, electrical properties of the structure and, surface charactreistics can be assessed. Examples in the performance evaluation of etched well or thick window planar high radiance diodes are presented.
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