{"title":"A 640 kilopixel CCD imager for space applications","authors":"M. Blouke, J. E. Hall, J. Breitzmann","doi":"10.1109/IEDM.1978.189441","DOIUrl":null,"url":null,"abstract":"Functional 800 × 800 pixel charge coupled device (CCD) imagers have been successfully fabricated and operated. These devices are fabricated using a three level polysilicon gate technology. Pixel size is 15 µm × 15 µm with an active imaging area of 1.44 cm2. The overall dimensions of the chip are 17.8 mm × 17.8 mm. The devices are designed to operate cooled to -100°C, thinned with backside illumination. This paper will discuss the design, fabrication and preliminary operation of these imagers. These devices represent the largest CCDs and are believed to be the largest MOS circuits fabricated to date.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1978 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1978.189441","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Functional 800 × 800 pixel charge coupled device (CCD) imagers have been successfully fabricated and operated. These devices are fabricated using a three level polysilicon gate technology. Pixel size is 15 µm × 15 µm with an active imaging area of 1.44 cm2. The overall dimensions of the chip are 17.8 mm × 17.8 mm. The devices are designed to operate cooled to -100°C, thinned with backside illumination. This paper will discuss the design, fabrication and preliminary operation of these imagers. These devices represent the largest CCDs and are believed to be the largest MOS circuits fabricated to date.