A 640 kilopixel CCD imager for space applications

M. Blouke, J. E. Hall, J. Breitzmann
{"title":"A 640 kilopixel CCD imager for space applications","authors":"M. Blouke, J. E. Hall, J. Breitzmann","doi":"10.1109/IEDM.1978.189441","DOIUrl":null,"url":null,"abstract":"Functional 800 × 800 pixel charge coupled device (CCD) imagers have been successfully fabricated and operated. These devices are fabricated using a three level polysilicon gate technology. Pixel size is 15 µm × 15 µm with an active imaging area of 1.44 cm2. The overall dimensions of the chip are 17.8 mm × 17.8 mm. The devices are designed to operate cooled to -100°C, thinned with backside illumination. This paper will discuss the design, fabrication and preliminary operation of these imagers. These devices represent the largest CCDs and are believed to be the largest MOS circuits fabricated to date.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1978 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1978.189441","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

Functional 800 × 800 pixel charge coupled device (CCD) imagers have been successfully fabricated and operated. These devices are fabricated using a three level polysilicon gate technology. Pixel size is 15 µm × 15 µm with an active imaging area of 1.44 cm2. The overall dimensions of the chip are 17.8 mm × 17.8 mm. The devices are designed to operate cooled to -100°C, thinned with backside illumination. This paper will discuss the design, fabrication and preliminary operation of these imagers. These devices represent the largest CCDs and are believed to be the largest MOS circuits fabricated to date.
用于空间应用的640千像素CCD成像仪
功能800 × 800像素电荷耦合器件(CCD)成像仪已成功制作并运行。这些器件是使用三能级多晶硅栅极技术制造的。像素尺寸为15µm × 15µm,有效成像面积为1.44 cm2。芯片的外形尺寸为17.8 mm × 17.8 mm。该设备的设计工作温度为-100°C,背面照明使其变薄。本文将讨论这些成像仪的设计、制造和初步操作。这些器件代表了最大的ccd,并且被认为是迄今为止制造的最大的MOS电路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信