{"title":"用于空间应用的640千像素CCD成像仪","authors":"M. Blouke, J. E. Hall, J. Breitzmann","doi":"10.1109/IEDM.1978.189441","DOIUrl":null,"url":null,"abstract":"Functional 800 × 800 pixel charge coupled device (CCD) imagers have been successfully fabricated and operated. These devices are fabricated using a three level polysilicon gate technology. Pixel size is 15 µm × 15 µm with an active imaging area of 1.44 cm2. The overall dimensions of the chip are 17.8 mm × 17.8 mm. The devices are designed to operate cooled to -100°C, thinned with backside illumination. This paper will discuss the design, fabrication and preliminary operation of these imagers. These devices represent the largest CCDs and are believed to be the largest MOS circuits fabricated to date.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A 640 kilopixel CCD imager for space applications\",\"authors\":\"M. Blouke, J. E. Hall, J. Breitzmann\",\"doi\":\"10.1109/IEDM.1978.189441\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Functional 800 × 800 pixel charge coupled device (CCD) imagers have been successfully fabricated and operated. These devices are fabricated using a three level polysilicon gate technology. Pixel size is 15 µm × 15 µm with an active imaging area of 1.44 cm2. The overall dimensions of the chip are 17.8 mm × 17.8 mm. The devices are designed to operate cooled to -100°C, thinned with backside illumination. This paper will discuss the design, fabrication and preliminary operation of these imagers. These devices represent the largest CCDs and are believed to be the largest MOS circuits fabricated to date.\",\"PeriodicalId\":164556,\"journal\":{\"name\":\"1978 International Electron Devices Meeting\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1978 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1978.189441\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1978 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1978.189441","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
摘要
功能800 × 800像素电荷耦合器件(CCD)成像仪已成功制作并运行。这些器件是使用三能级多晶硅栅极技术制造的。像素尺寸为15µm × 15µm，有效成像面积为1.44 cm2。芯片的外形尺寸为17.8 mm × 17.8 mm。该设备的设计工作温度为-100°C，背面照明使其变薄。本文将讨论这些成像仪的设计、制造和初步操作。这些器件代表了最大的ccd，并且被认为是迄今为止制造的最大的MOS电路。
Functional 800 × 800 pixel charge coupled device (CCD) imagers have been successfully fabricated and operated. These devices are fabricated using a three level polysilicon gate technology. Pixel size is 15 µm × 15 µm with an active imaging area of 1.44 cm2. The overall dimensions of the chip are 17.8 mm × 17.8 mm. The devices are designed to operate cooled to -100°C, thinned with backside illumination. This paper will discuss the design, fabrication and preliminary operation of these imagers. These devices represent the largest CCDs and are believed to be the largest MOS circuits fabricated to date.
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