{"title":"宽带宽10.6 µm (Hg,Cd)用于红外外差应用的光电二极管","authors":"J. Shanley, L. C. Perry","doi":"10.1109/IEDM.1978.189445","DOIUrl":null,"url":null,"abstract":"This paper reports the lowest noise equivalent power (NEP), approximately 6.2 × 10<sup>-20</sup>watts/Hz, ever measured for 10.6 µm n<sup>+</sup>-n<sup>-</sup>-p<sup>+</sup>(Hg,Cd)Te photodiodes at a frequency of 1750 MHz and at 77 K, as determined by blackbody heterodyne radiometry techniques (1-3). This value of NEP corresponds to an effective heterodyne quantum efficiency of 30%. The devices were fabricated by means of planar processing techniques and capacitance-voltage measurements revealed that the junctions were abrupt and contained a donor concentration in the n<sup>-</sup>layer of approximately 4.0 × 10<sup>14</sup>to 1.0 × 10<sup>15</sup>cm<sup>-3</sup>.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"171 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Wide bandwidth 10.6 µm (Hg,Cd)Te photodiodes for infrared heterodyne applications\",\"authors\":\"J. Shanley, L. C. Perry\",\"doi\":\"10.1109/IEDM.1978.189445\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports the lowest noise equivalent power (NEP), approximately 6.2 × 10<sup>-20</sup>watts/Hz, ever measured for 10.6 µm n<sup>+</sup>-n<sup>-</sup>-p<sup>+</sup>(Hg,Cd)Te photodiodes at a frequency of 1750 MHz and at 77 K, as determined by blackbody heterodyne radiometry techniques (1-3). This value of NEP corresponds to an effective heterodyne quantum efficiency of 30%. The devices were fabricated by means of planar processing techniques and capacitance-voltage measurements revealed that the junctions were abrupt and contained a donor concentration in the n<sup>-</sup>layer of approximately 4.0 × 10<sup>14</sup>to 1.0 × 10<sup>15</sup>cm<sup>-3</sup>.\",\"PeriodicalId\":164556,\"journal\":{\"name\":\"1978 International Electron Devices Meeting\",\"volume\":\"171 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1978 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1978.189445\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1978 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1978.189445","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Wide bandwidth 10.6 µm (Hg,Cd)Te photodiodes for infrared heterodyne applications
This paper reports the lowest noise equivalent power (NEP), approximately 6.2 × 10-20watts/Hz, ever measured for 10.6 µm n+-n--p+(Hg,Cd)Te photodiodes at a frequency of 1750 MHz and at 77 K, as determined by blackbody heterodyne radiometry techniques (1-3). This value of NEP corresponds to an effective heterodyne quantum efficiency of 30%. The devices were fabricated by means of planar processing techniques and capacitance-voltage measurements revealed that the junctions were abrupt and contained a donor concentration in the n-layer of approximately 4.0 × 1014to 1.0 × 1015cm-3.
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