GaInAsP/InP lasers and detectors for fiber optics communications at 1.1-1.3 µm

Abstract

Diode lasers and avalanche diodes of GaInAsP/InP are under development for the 1.1-1.3 µm wavelength region of current interest for fiber optics applications. Early versions of both of these devices show highly promising performance characteristics. Current state-of-the-art results, as well as a description of the device structures, will be presented.