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2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)最新文献

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Remote Control of Doping Profile, Silicon Interface, and Gate Dielectric Reliability via Oxygen Insertion into Silicon Channel 通过氧插入硅通道远程控制掺杂轮廓、硅界面和栅极介电可靠性
2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2022-11-28 DOI: 10.1109/IMFEDK56875.2022.9975306
H. Takeuchi, R. Mears, M. Hytha, D. Connelly, P. Nicollian, H. Wong
{"title":"Remote Control of Doping Profile, Silicon Interface, and Gate Dielectric Reliability via Oxygen Insertion into Silicon Channel","authors":"H. Takeuchi, R. Mears, M. Hytha, D. Connelly, P. Nicollian, H. Wong","doi":"10.1109/IMFEDK56875.2022.9975306","DOIUrl":"https://doi.org/10.1109/IMFEDK56875.2022.9975306","url":null,"abstract":"Insertion of partial monolayers of oxygen atoms into Si lattice leads to modification of formation enthalpy of various dopants and point defects, enabling remote control of doping profiles away from the inserted film. 18O isotope tracer revealed exchange of oxygen atoms between oxygen-insertion layers and gate oxide. This finding likely accounts for 35% improvement of surface roughness scattering rate of inversion electrons as well as 6x improvement of charge-to-breakdown of thin gate dielectrics experimentally observed. Impact of the OI(oxygen inserted)-Si channel is greater for HKMG(high-k metal gate) stack due to modification of interface charge properties.","PeriodicalId":162017,"journal":{"name":"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134149445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
System Integration Technology Based on 3D Integration 基于三维集成的系统集成技术
2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2022-11-28 DOI: 10.1109/IMFEDK56875.2022.9975417
M. Koyanagi
{"title":"System Integration Technology Based on 3D Integration","authors":"M. Koyanagi","doi":"10.1109/IMFEDK56875.2022.9975417","DOIUrl":"https://doi.org/10.1109/IMFEDK56875.2022.9975417","url":null,"abstract":"A heterogeneous 3D system integration technology is the key technology to achieve future high-performance and energy efficient systems such as high-performance computer system, AI system, post 5G/6G system and quantum computing system. Current status and future prospect of heterogeneous 3D system integration technology are discussed.","PeriodicalId":162017,"journal":{"name":"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122362488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Carrier Control of In2O3 TFT Fabricated by Atomic Layer Deposition 原子层沉积法制备In2O3 TFT的载流子控制
2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2022-11-28 DOI: 10.1109/IMFEDK56875.2022.9975398
Yuto Kawato, M. Uenuma, Takanori Takahashi, Y. Uraoka
{"title":"Carrier Control of In2O3 TFT Fabricated by Atomic Layer Deposition","authors":"Yuto Kawato, M. Uenuma, Takanori Takahashi, Y. Uraoka","doi":"10.1109/IMFEDK56875.2022.9975398","DOIUrl":"https://doi.org/10.1109/IMFEDK56875.2022.9975398","url":null,"abstract":"In2O3 thin films were deposited using atomic layer deposition (ALD), which is suitable for deposition on three-dimensional structures. It was applied to thin-film transistors (TFT), where high-mobility was maintained even in thin channels of 10 nm. Furthermore, it was operated as fully depleted mode and normally-off were obtained. It was suggested that the introduction of AlOx passivation layer and annealing process can effectively reduce oxygen vacancies in InOx channel without doping of additive elements.","PeriodicalId":162017,"journal":{"name":"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129858493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
S2 Lamb-mode acoustic resonator with grooved micro-channels for liquids characterization S2带沟槽微通道的lamb模声学谐振器，用于液体表征
2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2022-11-28 DOI: 10.1109/IMFEDK56875.2022.9975426
F. Laidoudi, F. Kanouni, C. Caliendo
{"title":"S2 Lamb-mode acoustic resonator with grooved micro-channels for liquids characterization","authors":"F. Laidoudi, F. Kanouni, C. Caliendo","doi":"10.1109/IMFEDK56875.2022.9975426","DOIUrl":"https://doi.org/10.1109/IMFEDK56875.2022.9975426","url":null,"abstract":"This paper reports the sensitivity of second order S2 Lamb mode to liquid characteristics, in which an acoustic Lamb mode resonator LWR based on LiNbO3 ZX (LNO) is numerically studied. The sensitivity of the device to liquids loading is enhanced by incorporating distributed micro-channels in the wave path in order to increase the contact surface between the liquid and the acoustic wave. The obtained results contribute in the development of high sensitivity acoustic sensors for liquids characterization.","PeriodicalId":162017,"journal":{"name":"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123289724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Oxygen plasma treatment on the performance of GaN-based MIS-HEMTs 氧等离子体处理对gan基miss - hemt性能的影响
2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2022-11-28 DOI: 10.1109/IMFEDK56875.2022.9975436
K. Sekiyama, M. Ishiguro, S. Yamazaki, S. Urano, A. Baratov, J. Asubar, M. Kuzuhara
{"title":"Effect of Oxygen plasma treatment on the performance of GaN-based MIS-HEMTs","authors":"K. Sekiyama, M. Ishiguro, S. Yamazaki, S. Urano, A. Baratov, J. Asubar, M. Kuzuhara","doi":"10.1109/IMFEDK56875.2022.9975436","DOIUrl":"https://doi.org/10.1109/IMFEDK56875.2022.9975436","url":null,"abstract":"We have studied the effects of oxygen plasma treatment prior to insulator deposition on the electrical performance of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). Devices treated with oxygen plasma exhibit more positive threshold voltages, less hysteresis in transfer curves and higher peak transconductance values compared with reference devices without oxygen plasma treatment. Our results suggest that oxygen plasma treatment of the AlGaN surface before insulator deposition can improve the overall electrical performance of GaN-based MIS-HEMTs.","PeriodicalId":162017,"journal":{"name":"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128609433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IMFEDK 2022 Cover Page IMFEDK 2022封面
2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2022-11-28 DOI: 10.1109/imfedk56875.2022.9975397
{"title":"IMFEDK 2022 Cover Page","authors":"","doi":"10.1109/imfedk56875.2022.9975397","DOIUrl":"https://doi.org/10.1109/imfedk56875.2022.9975397","url":null,"abstract":"","PeriodicalId":162017,"journal":{"name":"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117000270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Lessons Learned in Omnidirectional Co-Design of Neuromorphic Systems 神经形态系统全方位协同设计的经验教训
2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2022-11-28 DOI: 10.1109/IMFEDK56875.2022.9975370
C. Schuman, J. Plank, G. Rose, Maryam Parsa
{"title":"Lessons Learned in Omnidirectional Co-Design of Neuromorphic Systems","authors":"C. Schuman, J. Plank, G. Rose, Maryam Parsa","doi":"10.1109/IMFEDK56875.2022.9975370","DOIUrl":"https://doi.org/10.1109/IMFEDK56875.2022.9975370","url":null,"abstract":"Neuromorphic computing is a broad, interdisciplinary field that spans across all levels of the compute stack, from applications and algorithms to devices and materials. When designing a new computing system from the ground up, co-design is key. Here, we discuss different types of co-design for neuromorphic systems, and we advocate specifically for omnidirectional co-design. Finally, we discuss recommendations for performing omnidirectional co-design, based on our own experience in the realm of neuromorphic computing.","PeriodicalId":162017,"journal":{"name":"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128441652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improved Ohmic Contact Model for Accurate Simulation of GaN-based HEMTs Using Ensemble Monte Carlo Methods 基于集成蒙特卡罗方法的改进欧姆接触模型用于gan基hemt的精确仿真
2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2022-11-28 DOI: 10.1109/IMFEDK56875.2022.9975422
K. Sakota, K. Herbert, K. Shibata, M. Kuzuhara, K. Kodama, J. Asubar
{"title":"Improved Ohmic Contact Model for Accurate Simulation of GaN-based HEMTs Using Ensemble Monte Carlo Methods","authors":"K. Sakota, K. Herbert, K. Shibata, M. Kuzuhara, K. Kodama, J. Asubar","doi":"10.1109/IMFEDK56875.2022.9975422","DOIUrl":"https://doi.org/10.1109/IMFEDK56875.2022.9975422","url":null,"abstract":"Ensemble Monte Carlo simulation was performed to simulate the current gain cutoff frequency (f<inf>T</inf>) of an AlN/GaN HEMT. It was found that the donor density in the source ohmic neutral region should be larger than 5×10<sup>20</sup> cm<sup>-3</sup> to precisely calculate the drain current. The calculation results indicated that as high as 1.6 THz of f<inf>T</inf> was achieved with a gate length of 10 nm.","PeriodicalId":162017,"journal":{"name":"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124434409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
1/f Noise Characterizing Method of MOSFET Devices and Processes by the Power Spectral Density Integrated Method 1/f功率谱密度积分法表征MOSFET器件和工艺的噪声方法
2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2022-11-28 DOI: 10.1109/IMFEDK56875.2022.9975377
Yoshiki Murayama, Masato Kijima, Takehiko Yamashita, Yusuke Takezaki, Masanori Miyata, Ryuta Isobe, Hirobumi Watanabe
{"title":"1/f Noise Characterizing Method of MOSFET Devices and Processes by the Power Spectral Density Integrated Method","authors":"Yoshiki Murayama, Masato Kijima, Takehiko Yamashita, Yusuke Takezaki, Masanori Miyata, Ryuta Isobe, Hirobumi Watanabe","doi":"10.1109/IMFEDK56875.2022.9975377","DOIUrl":"https://doi.org/10.1109/IMFEDK56875.2022.9975377","url":null,"abstract":"Using a unique characterization method that integrates the power spectral density (PSD) over a given frequency band, we examined the 1/f noise dependence of MOSFET devices and processes. As a result, we were able to identify a slight dependence and a Lorentzian noise that was difficult to determine from the shape of the PSD graph. This new method of quantitatively capturing the differences in stochastic phenomena was shown to be effective in device and process development.","PeriodicalId":162017,"journal":{"name":"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132957365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of High-Temperature Annealed Al2O3 insulator on GaN MIS-HEMTs performance 高温退火Al2O3绝缘子对GaN miss - hemts性能的影响
2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2022-11-28 DOI: 10.1109/IMFEDK56875.2022.9975407
B. D. D. Lau, S. Yamazaki, S. Urano, A. Baratov, J. Asubar, M. Kuzuhara
{"title":"Effect of High-Temperature Annealed Al2O3 insulator on GaN MIS-HEMTs performance","authors":"B. D. D. Lau, S. Yamazaki, S. Urano, A. Baratov, J. Asubar, M. Kuzuhara","doi":"10.1109/IMFEDK56875.2022.9975407","DOIUrl":"https://doi.org/10.1109/IMFEDK56875.2022.9975407","url":null,"abstract":"We investigated the effects of high-temperature annealed (HTA) at 880 °C of Al2O3 gate insulator on the performance of AlGaN/GaN MIS-HEMTs. HTA-Al2O3 MIS-capacitors exhibited evidences of spillover of 2DEG from AlGaN/GaN to Al2O3/AlGaN interface. Moreover, HTA-Al2O3 MIS-HEMTs also showed smaller hysteresis in transfer curves and higher maximum drain current compared to those of the reference Al2O3/AlGaN/GaN MIS-HEMTs. These suggest highly improved insulator/semiconductor interfaces by high-temperature annealing of Al2O3 insulator layer.","PeriodicalId":162017,"journal":{"name":"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131418525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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