1/f功率谱密度积分法表征MOSFET器件和工艺的噪声方法

2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2022-11-28 DOI:10.1109/IMFEDK56875.2022.9975377

Yoshiki Murayama, Masato Kijima, Takehiko Yamashita, Yusuke Takezaki, Masanori Miyata, Ryuta Isobe, Hirobumi Watanabe

{"title":"1/f功率谱密度积分法表征MOSFET器件和工艺的噪声方法","authors":"Yoshiki Murayama, Masato Kijima, Takehiko Yamashita, Yusuke Takezaki, Masanori Miyata, Ryuta Isobe, Hirobumi Watanabe","doi":"10.1109/IMFEDK56875.2022.9975377","DOIUrl":null,"url":null,"abstract":"Using a unique characterization method that integrates the power spectral density (PSD) over a given frequency band, we examined the 1/f noise dependence of MOSFET devices and processes. As a result, we were able to identify a slight dependence and a Lorentzian noise that was difficult to determine from the shape of the PSD graph. This new method of quantitatively capturing the differences in stochastic phenomena was shown to be effective in device and process development.","PeriodicalId":162017,"journal":{"name":"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"1/f Noise Characterizing Method of MOSFET Devices and Processes by the Power Spectral Density Integrated Method\",\"authors\":\"Yoshiki Murayama, Masato Kijima, Takehiko Yamashita, Yusuke Takezaki, Masanori Miyata, Ryuta Isobe, Hirobumi Watanabe\",\"doi\":\"10.1109/IMFEDK56875.2022.9975377\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Using a unique characterization method that integrates the power spectral density (PSD) over a given frequency band, we examined the 1/f noise dependence of MOSFET devices and processes. As a result, we were able to identify a slight dependence and a Lorentzian noise that was difficult to determine from the shape of the PSD graph. This new method of quantitatively capturing the differences in stochastic phenomena was shown to be effective in device and process development.\",\"PeriodicalId\":162017,\"journal\":{\"name\":\"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-11-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK56875.2022.9975377\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK56875.2022.9975377","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

使用一种独特的表征方法，集成了给定频段内的功率谱密度(PSD)，我们研究了MOSFET器件和工艺的1/f噪声依赖性。结果，我们能够识别出轻微的依赖关系和洛伦兹噪声，这很难从PSD图的形状中确定。这种定量捕获随机现象差异的新方法在设备和工艺开发中被证明是有效的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

1/f Noise Characterizing Method of MOSFET Devices and Processes by the Power Spectral Density Integrated Method

Using a unique characterization method that integrates the power spectral density (PSD) over a given frequency band, we examined the 1/f noise dependence of MOSFET devices and processes. As a result, we were able to identify a slight dependence and a Lorentzian noise that was difficult to determine from the shape of the PSD graph. This new method of quantitatively capturing the differences in stochastic phenomena was shown to be effective in device and process development.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

自引率

0.00%

发文量