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2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)最新文献

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Modeling of Super Steep Subthreshold Slope Device by using Neural Network 基于神经网络的超陡亚阈边坡装置建模
2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2022-11-28 DOI: 10.1109/IMFEDK56875.2022.9975367
K. Nakata, Takayuki Mori, J. Ida
{"title":"Modeling of Super Steep Subthreshold Slope Device by using Neural Network","authors":"K. Nakata, Takayuki Mori, J. Ida","doi":"10.1109/IMFEDK56875.2022.9975367","DOIUrl":"https://doi.org/10.1109/IMFEDK56875.2022.9975367","url":null,"abstract":"In this study, the characteristics modeling of a PN-body tied silicon on insulator field-effect transistor, which has super steep subthreshold slope (SS) (less than 10 mV/dec) characteristics, was tried by using a neural network. We found that four or more hidden layers are needed to express the super steep SS.","PeriodicalId":162017,"journal":{"name":"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"169 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124282024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evaluation of Soft Error Tolerance on Flip-Flops Restoring from a Single Node Upset by C-elements 单节点c元恢复触发器的软容错性评估
2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2022-11-28 DOI: 10.1109/IMFEDK56875.2022.9975373
T. Ito, Ryuichi Nakajima, J. Furuta, Kazutoshi Kobayashi
{"title":"Evaluation of Soft Error Tolerance on Flip-Flops Restoring from a Single Node Upset by C-elements","authors":"T. Ito, Ryuichi Nakajima, J. Furuta, Kazutoshi Kobayashi","doi":"10.1109/IMFEDK56875.2022.9975373","DOIUrl":"https://doi.org/10.1109/IMFEDK56875.2022.9975373","url":null,"abstract":"Integrated circuits on automotive or aerospace applications must have high radiation tolerance. Multiplication such as duplication or triplication is effective for flip-flops (FFs). Clock gating may be used to reduce power consumption. Soft error tolerance depends on multiplexing, and soft error tolerance becomes weak by clock gating. We evaluate soft error tolerance of three types of FFs by α-ray and heavy ion irradiaiton test. According to the results of α-ray irradiation test, the soft-error tolerance of two FFs is 2x or 26x stronger than that of BCDMRFF. Heavy-ions irradiation test shows that the tolerance of the FF, which restore the errors, is 30x or more than that of BCDMRFF.","PeriodicalId":162017,"journal":{"name":"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130697869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dual-Band Single-Output WLAN Directional Coupler in a SOI CMOS Process SOI CMOS工艺中的双带单输出WLAN定向耦合器
2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2022-11-28 DOI: 10.1109/IMFEDK56875.2022.9975435
Ryangsu Kim, Kenta Seki, Kazuhito Osawa
{"title":"Dual-Band Single-Output WLAN Directional Coupler in a SOI CMOS Process","authors":"Ryangsu Kim, Kenta Seki, Kazuhito Osawa","doi":"10.1109/IMFEDK56875.2022.9975435","DOIUrl":"https://doi.org/10.1109/IMFEDK56875.2022.9975435","url":null,"abstract":"A new dual-band directional coupler for wireless local area network (WLAN) is proposed to achieve high directivity. Single coupling line couples both 2.4-2.5 GHz and 4.9-5.85 GHz signals. The coupler has been implemented in the SOI CMOS process with an electrostatic static discharge (ESD) protection device. The measurement results showed 0.15 dB insertion loss and 23 dB directivity at 2.4-2.5 GHz, and 0.42 dB and 28 dB at 4.9-5.85 GHz, respectively. Its human body model (HBM) ESD robustness is higher than 4 kV without DC power consumption.","PeriodicalId":162017,"journal":{"name":"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114641891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Polarized light observation of semiconductor wafers for power devices 功率器件用半导体晶圆的偏振光观测
2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2022-11-28 DOI: 10.1109/IMFEDK56875.2022.9975432
K. Murayama, Seiya Mizutani, Yuya Mizutani, S. Harada
{"title":"Polarized light observation of semiconductor wafers for power devices","authors":"K. Murayama, Seiya Mizutani, Yuya Mizutani, S. Harada","doi":"10.1109/IMFEDK56875.2022.9975432","DOIUrl":"https://doi.org/10.1109/IMFEDK56875.2022.9975432","url":null,"abstract":"Polarized light observation is one of the promising methods for the non-destructive characterization of semiconductor wafers for power devices. We have visualized the distribution of defects in SiC wafers by birefringence imaging.","PeriodicalId":162017,"journal":{"name":"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116335050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Surface engineering of oxide nanostructures for efficient energy technologies 用于高效能源技术的氧化纳米结构表面工程
2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2022-11-28 DOI: 10.1109/IMFEDK56875.2022.9975419
M. T. Elm
{"title":"Surface engineering of oxide nanostructures for efficient energy technologies","authors":"M. T. Elm","doi":"10.1109/IMFEDK56875.2022.9975419","DOIUrl":"https://doi.org/10.1109/IMFEDK56875.2022.9975419","url":null,"abstract":"Nanostructured mixed-conducting oxides are key components for energy conversion and energy storage devices. Improving their functionality is of large importance in order to tackle the growing demand of energy. All nanostructure inherently exhibit a high surface area, which enables tailoring their electrochemical properties by surface engineering. Modifying the surface properties offers the possibility to manipulate electronic and ionic charge transport as well as charge storage in the surface region. In addition, it allows the increase of the thermal and chemical stability of nanostructures by the deposition of a thin protective coating. Due to the large number of possibilities of controlling the electrochemical properties of nanostructures for energy devices, surface engineering plays an important role for the design of efficient energy technologies.","PeriodicalId":162017,"journal":{"name":"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"430 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122870156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quasi-Normally-Off operation via Selective Area Growth in high-K-insulated GaN MIS-HEMTs 通过高k绝缘GaN mishemt的选择性面积生长实现准正常关闭操作
2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2022-11-28 DOI: 10.1109/IMFEDK56875.2022.9975427
S. Maeda, J. Asubar, I. Nagase, S. Urano, T. Nezu, T. Igarashi, A. Baratov, A. Yamamoto, M. Kuzuhara
{"title":"Quasi-Normally-Off operation via Selective Area Growth in high-K-insulated GaN MIS-HEMTs","authors":"S. Maeda, J. Asubar, I. Nagase, S. Urano, T. Nezu, T. Igarashi, A. Baratov, A. Yamamoto, M. Kuzuhara","doi":"10.1109/IMFEDK56875.2022.9975427","DOIUrl":"https://doi.org/10.1109/IMFEDK56875.2022.9975427","url":null,"abstract":"We have fabricated and characterized ZrO2/AlGaN/GaN MIS-HEMTs with \"dry-etching free\" gate recess structures realized using Selective Area Growth (SAG) of AlGaN barrier on the access regions. The transfer characteristics revealed threshold voltage -0.5 V, suggesting quasi-normally-off operation. In comparison with reference planar HEMTs, the threshold voltage of SAG-HEMTs was shifted by about +5 V towards the positive voltage direction. Moreover, SAG-HEMTs showed almost parallel shift of transfer curves with respect to that of the reference planar devices, suggesting no considerable mobility degradation.","PeriodicalId":162017,"journal":{"name":"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126218974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mist chemical vapor deposited-gate insulators for GaN-based MIS devices applications 用于氮化镓基MIS器件的薄雾化学气相沉积栅绝缘子
2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2022-11-28 DOI: 10.1109/IMFEDK56875.2022.9975434
Zenji Yatabe, Y. Nakamura, J. Asubar
{"title":"Mist chemical vapor deposited-gate insulators for GaN-based MIS devices applications","authors":"Zenji Yatabe, Y. Nakamura, J. Asubar","doi":"10.1109/IMFEDK56875.2022.9975434","DOIUrl":"https://doi.org/10.1109/IMFEDK56875.2022.9975434","url":null,"abstract":"Mist chemical vapor deposition (mist-CVD) is a non-vacuum technique for depositing various metal oxide/sulfite films from relative non-toxic and nonpyrophoric aqueous solution, resulting in relatively simple, low-cost and fast deposition rate under atmospheric pressure. Recent reports have demonstrated the capability of mist-CVD as an able replacement for conventional vacuum deposition methods in some applications. In this work, firstly state-of-the-art literature reports on mist-CVD techniques are reviewed. Finally, we highlight the important progress in mist-CVD deposited-gate insulators for GaN-based metal-insulator-semiconductor (MIS) devices applications.","PeriodicalId":162017,"journal":{"name":"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127107389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Polyimide-supported AlScN thin films based surface acoustic wave (SAW) delay line for flexible electronics 柔性电子用聚酰亚胺支撑的AlScN薄膜表面声波(SAW)延迟线
2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2022-11-28 DOI: 10.1109/IMFEDK56875.2022.9975399
F. Kanouni, Laidoudi Farouk
{"title":"Polyimide-supported AlScN thin films based surface acoustic wave (SAW) delay line for flexible electronics","authors":"F. Kanouni, Laidoudi Farouk","doi":"10.1109/IMFEDK56875.2022.9975399","DOIUrl":"https://doi.org/10.1109/IMFEDK56875.2022.9975399","url":null,"abstract":"the frequency response of Polyimide-Supported AlScN thin Films based surface acoustic wave (SAW) delay line is investigated. The elastic, dielectric and piezoelectric coefficients of AlScN alloys in the range of Scandium concentration x = 0, 0.125, 0.25 and 0.375 are obtained. It is found that the scandium content has a major impact on the electro-acoustic Properties of AlScN thin films. In addition, the electrical admittance of AlScN-SAW deposited on polyimide sensor is demonstrated for different Scandium concentrations. The resonant frequencies shift down due to the increases of scandium concentration. The obtained results show that flexible SAW based on c-axis AlScN/PI are promising composite structure for high sensitive sensors","PeriodicalId":162017,"journal":{"name":"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131030788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Post Deposition Annealing on Electrical Properties of GaOx/Si structure by Mist Chemical Vapor Deposition Method 沉积后退火对雾化学气相沉积法GaOx/Si结构电性能的影响
2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2022-11-28 DOI: 10.1109/IMFEDK56875.2022.9975375
Hidenobu Mori, H. Yoshida
{"title":"Effect of Post Deposition Annealing on Electrical Properties of GaOx/Si structure by Mist Chemical Vapor Deposition Method","authors":"Hidenobu Mori, H. Yoshida","doi":"10.1109/IMFEDK56875.2022.9975375","DOIUrl":"https://doi.org/10.1109/IMFEDK56875.2022.9975375","url":null,"abstract":"We studied the effect of post deposition annealing (PDA) on electrical properties of gallium oxide (GaO<inf>x</inf>) /silicon (Si) structure fabricated by mist chemical vapor deposition (CVD). The effective fixed charge density (Q<inf>eff</inf>) and the interfacial trap density (D<inf>it</inf>) were characterized by a high-low frequency capacitance-Voltage (C-V) technique. The chemical-bonding states of the GaO<inf>x</inf>/Si structures were determined by the XPS spectra. As a result, although the negative Q<inf>eff</inf> was almost constant regardless of the PDA conditions, the D<inf>it</inf> was decreased in H<inf>2</inf> atmosphere. It was considered that the decreased in D<inf>it</inf> is to contribute to the decrease in the dangling bonds on the Si surface form the results of the XPS spectra.","PeriodicalId":162017,"journal":{"name":"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117157084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monolithic Integration of GaN-based Optocoupler 氮化镓光耦合器的单片集成
2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2022-11-28 DOI: 10.1109/IMFEDK56875.2022.9975305
Chengshiun Liou, C. Tsou
{"title":"Monolithic Integration of GaN-based Optocoupler","authors":"Chengshiun Liou, C. Tsou","doi":"10.1109/IMFEDK56875.2022.9975305","DOIUrl":"https://doi.org/10.1109/IMFEDK56875.2022.9975305","url":null,"abstract":"This paper proposed a GaN-based optocoupler chip with monolithic integration. It differs from commercial photodiode optocouplers consisting of at least two coupled chips. This study monolithically integrated a photodiode and a light emitting diode on a sapphire substrate as a single chip. This approach makes the optical transmission of signal in a thin sapphire substrate with a micro-meter scale transmission path reducing light loss. In the experiment, the measurement results showed that the proposed chip has a great current transfer ratio. It meets commercial specifications and provides a more efficient optocoupler manufacturing solution.","PeriodicalId":162017,"journal":{"name":"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131440732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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