通过高k绝缘GaN mishemt的选择性面积生长实现准正常关闭操作

2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2022-11-28 DOI:10.1109/IMFEDK56875.2022.9975427

S. Maeda, J. Asubar, I. Nagase, S. Urano, T. Nezu, T. Igarashi, A. Baratov, A. Yamamoto, M. Kuzuhara

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引用次数: 0

摘要

我们制作并表征了具有“无干蚀刻”栅极凹槽结构的ZrO2/AlGaN/GaN miss - hemts，该结构采用了AlGaN势垒的选择性面积生长(SAG)在通路区域上实现。传输特性显示阈值电压为-0.5 V，提示准正常关断工作。与参考平面hemt相比，sag - hemt的阈值电压向正电压方向移动了约+5 V。此外，与参考平面器件相比，sag - hemt的转移曲线几乎平行移动，表明迁移率没有明显下降。

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Quasi-Normally-Off operation via Selective Area Growth in high-K-insulated GaN MIS-HEMTs

We have fabricated and characterized ZrO2/AlGaN/GaN MIS-HEMTs with "dry-etching free" gate recess structures realized using Selective Area Growth (SAG) of AlGaN barrier on the access regions. The transfer characteristics revealed threshold voltage -0.5 V, suggesting quasi-normally-off operation. In comparison with reference planar HEMTs, the threshold voltage of SAG-HEMTs was shifted by about +5 V towards the positive voltage direction. Moreover, SAG-HEMTs showed almost parallel shift of transfer curves with respect to that of the reference planar devices, suggesting no considerable mobility degradation.

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2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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