{"title":"SOI CMOS工艺中的双带单输出WLAN定向耦合器","authors":"Ryangsu Kim, Kenta Seki, Kazuhito Osawa","doi":"10.1109/IMFEDK56875.2022.9975435","DOIUrl":null,"url":null,"abstract":"A new dual-band directional coupler for wireless local area network (WLAN) is proposed to achieve high directivity. Single coupling line couples both 2.4-2.5 GHz and 4.9-5.85 GHz signals. The coupler has been implemented in the SOI CMOS process with an electrostatic static discharge (ESD) protection device. The measurement results showed 0.15 dB insertion loss and 23 dB directivity at 2.4-2.5 GHz, and 0.42 dB and 28 dB at 4.9-5.85 GHz, respectively. Its human body model (HBM) ESD robustness is higher than 4 kV without DC power consumption.","PeriodicalId":162017,"journal":{"name":"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dual-Band Single-Output WLAN Directional Coupler in a SOI CMOS Process\",\"authors\":\"Ryangsu Kim, Kenta Seki, Kazuhito Osawa\",\"doi\":\"10.1109/IMFEDK56875.2022.9975435\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new dual-band directional coupler for wireless local area network (WLAN) is proposed to achieve high directivity. Single coupling line couples both 2.4-2.5 GHz and 4.9-5.85 GHz signals. The coupler has been implemented in the SOI CMOS process with an electrostatic static discharge (ESD) protection device. The measurement results showed 0.15 dB insertion loss and 23 dB directivity at 2.4-2.5 GHz, and 0.42 dB and 28 dB at 4.9-5.85 GHz, respectively. Its human body model (HBM) ESD robustness is higher than 4 kV without DC power consumption.\",\"PeriodicalId\":162017,\"journal\":{\"name\":\"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"volume\":\"73 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-11-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK56875.2022.9975435\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK56875.2022.9975435","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dual-Band Single-Output WLAN Directional Coupler in a SOI CMOS Process
A new dual-band directional coupler for wireless local area network (WLAN) is proposed to achieve high directivity. Single coupling line couples both 2.4-2.5 GHz and 4.9-5.85 GHz signals. The coupler has been implemented in the SOI CMOS process with an electrostatic static discharge (ESD) protection device. The measurement results showed 0.15 dB insertion loss and 23 dB directivity at 2.4-2.5 GHz, and 0.42 dB and 28 dB at 4.9-5.85 GHz, respectively. Its human body model (HBM) ESD robustness is higher than 4 kV without DC power consumption.