Mist chemical vapor deposited-gate insulators for GaN-based MIS devices applications

Abstract

Mist chemical vapor deposition (mist-CVD) is a non-vacuum technique for depositing various metal oxide/sulfite films from relative non-toxic and nonpyrophoric aqueous solution, resulting in relatively simple, low-cost and fast deposition rate under atmospheric pressure. Recent reports have demonstrated the capability of mist-CVD as an able replacement for conventional vacuum deposition methods in some applications. In this work, firstly state-of-the-art literature reports on mist-CVD techniques are reviewed. Finally, we highlight the important progress in mist-CVD deposited-gate insulators for GaN-based metal-insulator-semiconductor (MIS) devices applications.