Effect of Post Deposition Annealing on Electrical Properties of GaOx/Si structure by Mist Chemical Vapor Deposition Method

We studied the effect of post deposition annealing (PDA) on electrical properties of gallium oxide (GaOx) /silicon (Si) structure fabricated by mist chemical vapor deposition (CVD). The effective fixed charge density (Qeff) and the interfacial trap density (Dit) were characterized by a high-low frequency capacitance-Voltage (C-V) technique. The chemical-bonding states of the GaOx/Si structures were determined by the XPS spectra. As a result, although the negative Qeff was almost constant regardless of the PDA conditions, the Dit was decreased in H2 atmosphere. It was considered that the decreased in Dit is to contribute to the decrease in the dangling bonds on the Si surface form the results of the XPS spectra.