基于集成蒙特卡罗方法的改进欧姆接触模型用于gan基hemt的精确仿真

2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2022-11-28 DOI:10.1109/IMFEDK56875.2022.9975422

K. Sakota, K. Herbert, K. Shibata, M. Kuzuhara, K. Kodama, J. Asubar

{"title":"基于集成蒙特卡罗方法的改进欧姆接触模型用于gan基hemt的精确仿真","authors":"K. Sakota, K. Herbert, K. Shibata, M. Kuzuhara, K. Kodama, J. Asubar","doi":"10.1109/IMFEDK56875.2022.9975422","DOIUrl":null,"url":null,"abstract":"Ensemble Monte Carlo simulation was performed to simulate the current gain cutoff frequency (f<inf>T</inf>) of an AlN/GaN HEMT. It was found that the donor density in the source ohmic neutral region should be larger than 5×1020 cm-3 to precisely calculate the drain current. The calculation results indicated that as high as 1.6 THz of f<inf>T</inf> was achieved with a gate length of 10 nm.","PeriodicalId":162017,"journal":{"name":"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improved Ohmic Contact Model for Accurate Simulation of GaN-based HEMTs Using Ensemble Monte Carlo Methods\",\"authors\":\"K. Sakota, K. Herbert, K. Shibata, M. Kuzuhara, K. Kodama, J. Asubar\",\"doi\":\"10.1109/IMFEDK56875.2022.9975422\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ensemble Monte Carlo simulation was performed to simulate the current gain cutoff frequency (f<inf>T</inf>) of an AlN/GaN HEMT. It was found that the donor density in the source ohmic neutral region should be larger than 5×1020 cm-3 to precisely calculate the drain current. The calculation results indicated that as high as 1.6 THz of f<inf>T</inf> was achieved with a gate length of 10 nm.\",\"PeriodicalId\":162017,\"journal\":{\"name\":\"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-11-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK56875.2022.9975422\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK56875.2022.9975422","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用集成蒙特卡罗仿真方法模拟了AlN/GaN HEMT的电流增益截止频率(fT)。结果表明，为了精确计算漏极电流，源欧姆中性区的施主密度应大于5×1020 cm-3。计算结果表明，当栅极长度为10 nm时，可获得高达1.6 THz的fT。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Improved Ohmic Contact Model for Accurate Simulation of GaN-based HEMTs Using Ensemble Monte Carlo Methods

Ensemble Monte Carlo simulation was performed to simulate the current gain cutoff frequency (fT) of an AlN/GaN HEMT. It was found that the donor density in the source ohmic neutral region should be larger than 5×10²⁰ cm^-3 to precisely calculate the drain current. The calculation results indicated that as high as 1.6 THz of fT was achieved with a gate length of 10 nm.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

自引率

0.00%

发文量