Carrier Control of In2O3 TFT Fabricated by Atomic Layer Deposition

Abstract

In2O3 thin films were deposited using atomic layer deposition (ALD), which is suitable for deposition on three-dimensional structures. It was applied to thin-film transistors (TFT), where high-mobility was maintained even in thin channels of 10 nm. Furthermore, it was operated as fully depleted mode and normally-off were obtained. It was suggested that the introduction of AlOx passivation layer and annealing process can effectively reduce oxygen vacancies in InOx channel without doping of additive elements.