高温退火Al2O3绝缘子对GaN miss - hemts性能的影响

2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2022-11-28 DOI:10.1109/IMFEDK56875.2022.9975407

B. D. D. Lau, S. Yamazaki, S. Urano, A. Baratov, J. Asubar, M. Kuzuhara

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引用次数: 0

摘要

研究了880℃高温退火(HTA)对Al2O3栅极绝缘子性能的影响。HTA-Al2O3 miss电容器表现出2DEG从AlGaN/GaN向Al2O3/AlGaN界面溢出的证据。此外，与参考材料Al2O3/AlGaN/GaN mishemts相比，HTA-Al2O3 mishemts在传递曲线上表现出更小的滞后和更高的最大漏极电流。这表明，通过对Al2O3绝缘体层进行高温退火，可以大大改善绝缘体/半导体界面。

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Effect of High-Temperature Annealed Al2O3 insulator on GaN MIS-HEMTs performance

We investigated the effects of high-temperature annealed (HTA) at 880 °C of Al2O3 gate insulator on the performance of AlGaN/GaN MIS-HEMTs. HTA-Al2O3 MIS-capacitors exhibited evidences of spillover of 2DEG from AlGaN/GaN to Al2O3/AlGaN interface. Moreover, HTA-Al2O3 MIS-HEMTs also showed smaller hysteresis in transfer curves and higher maximum drain current compared to those of the reference Al2O3/AlGaN/GaN MIS-HEMTs. These suggest highly improved insulator/semiconductor interfaces by high-temperature annealing of Al2O3 insulator layer.

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2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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