S2带沟槽微通道的lamb模声学谐振器，用于液体表征

2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2022-11-28 DOI:10.1109/IMFEDK56875.2022.9975426

F. Laidoudi, F. Kanouni, C. Caliendo

{"title":"S2带沟槽微通道的lamb模声学谐振器，用于液体表征","authors":"F. Laidoudi, F. Kanouni, C. Caliendo","doi":"10.1109/IMFEDK56875.2022.9975426","DOIUrl":null,"url":null,"abstract":"This paper reports the sensitivity of second order S2 Lamb mode to liquid characteristics, in which an acoustic Lamb mode resonator LWR based on LiNbO3 ZX (LNO) is numerically studied. The sensitivity of the device to liquids loading is enhanced by incorporating distributed micro-channels in the wave path in order to increase the contact surface between the liquid and the acoustic wave. The obtained results contribute in the development of high sensitivity acoustic sensors for liquids characterization.","PeriodicalId":162017,"journal":{"name":"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"S2 Lamb-mode acoustic resonator with grooved micro-channels for liquids characterization\",\"authors\":\"F. Laidoudi, F. Kanouni, C. Caliendo\",\"doi\":\"10.1109/IMFEDK56875.2022.9975426\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports the sensitivity of second order S2 Lamb mode to liquid characteristics, in which an acoustic Lamb mode resonator LWR based on LiNbO3 ZX (LNO) is numerically studied. The sensitivity of the device to liquids loading is enhanced by incorporating distributed micro-channels in the wave path in order to increase the contact surface between the liquid and the acoustic wave. The obtained results contribute in the development of high sensitivity acoustic sensors for liquids characterization.\",\"PeriodicalId\":162017,\"journal\":{\"name\":\"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-11-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK56875.2022.9975426\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK56875.2022.9975426","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文报道了二阶S2 Lamb模对液体特性的敏感性，并对基于linbo3zx (LNO)的声学Lamb模谐振器LWR进行了数值研究。通过在波程中加入分布式微通道来增加液体与声波之间的接触面，提高了该装置对液体载荷的灵敏度。所得结果有助于开发用于液体表征的高灵敏度声学传感器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

S2 Lamb-mode acoustic resonator with grooved micro-channels for liquids characterization

This paper reports the sensitivity of second order S2 Lamb mode to liquid characteristics, in which an acoustic Lamb mode resonator LWR based on LiNbO3 ZX (LNO) is numerically studied. The sensitivity of the device to liquids loading is enhanced by incorporating distributed micro-channels in the wave path in order to increase the contact surface between the liquid and the acoustic wave. The obtained results contribute in the development of high sensitivity acoustic sensors for liquids characterization.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

自引率

0.00%

发文量