氧等离子体处理对gan基miss - hemt性能的影响

2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2022-11-28 DOI:10.1109/IMFEDK56875.2022.9975436

K. Sekiyama, M. Ishiguro, S. Yamazaki, S. Urano, A. Baratov, J. Asubar, M. Kuzuhara

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引用次数: 0

摘要

我们研究了绝缘体沉积前氧等离子体处理对AlGaN/GaN金属-绝缘体-半导体高电子迁移率晶体管(MIS-HEMTs)电性能的影响。与未经氧等离子体处理的参考器件相比，经氧等离子体处理的器件表现出更高的正阈值电压、更小的传递曲线迟滞和更高的峰值跨导值。我们的研究结果表明，在绝缘体沉积之前对AlGaN表面进行氧等离子体处理可以提高gan基miss - hemt的整体电性能。

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Effect of Oxygen plasma treatment on the performance of GaN-based MIS-HEMTs

We have studied the effects of oxygen plasma treatment prior to insulator deposition on the electrical performance of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). Devices treated with oxygen plasma exhibit more positive threshold voltages, less hysteresis in transfer curves and higher peak transconductance values compared with reference devices without oxygen plasma treatment. Our results suggest that oxygen plasma treatment of the AlGaN surface before insulator deposition can improve the overall electrical performance of GaN-based MIS-HEMTs.

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来源期刊

2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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