Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.最新文献_第5页

Effects of elastic modulus on the fracture behavior of low-dielectric constant films 弹性模量对低介电常数薄膜断裂行为的影响

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499924

T. Tsui, A. J. Griffin, J. Jacques, R. Fields, A. Mckerrow, R. Kraft

引用次数: 4

Understanding CMP-induced delamination in ultra low-k/Cu integration

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499984

P. Leduc, M. Savoye, S. Maitrejean, D. Scevola, V. Jousseaume, G. Passemard

引用次数: 15

Novel electro-chemical mechanical planarization using carbon polishing pad to achieve robust ultra low-k/Cu integration 新型电化学机械刨平技术，采用碳抛光垫实现超低k/Cu集成

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499982

S. Kondo, S. Tominaga, A. Namiki, K. Yamada, D. Abe, K. Fukaya, M. Shimada, N. Kobayashi

引用次数: 6

Effect of CMP downward pressure on nano-scale residual stresses in dielectric films with Cu interconnects assessed by cathodoluminescence spectroscopy 阴极发光光谱研究了CMP下压对Cu互连介质薄膜纳米级残余应力的影响

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499985

M. Kodera, S. Uekusa, S. Kakinuma, Y. Saijo, A. Fukunaga, M. Tsujimura, G. Pezzotti

引用次数: 1

Hybrid low-k/Cu dual damascene process for 45-32 nm technology node using self-assembled porous-silica ultra low-k films 45-32 nm工艺节点的低k/Cu混合双damascene工艺，自组装多孔硅超低k薄膜

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499919

S. Chikaki, A. Shimoyama, R. Yagi, T. Yoshino, T. Ono, A. Ishikawa, N. Fujii, N. Hata, T. Nakayama, K. Kohmura, H. Tanaka, T. Goto, J. Kawahara, Y. Sonoda, H. Matsuo, Y. Seino, S. Takada, N. Kunimi, Y. Uchida, S. Hishiya, Y. Shishida, K. Kinoshita, T. Kikkawa

引用次数: 2

Capacitive impacts of dummies on interconnect propagation performances for integrated circuits of the 65 nm node and below 电容性假体对65nm及以下节点集成电路互连传播性能的影响

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499948

B. Blampey, B. Fléchet, A. Farcy, U. Bermond, O. Cueto, J. Torres, G. Angénieux

{"title":"Capacitive impacts of dummies on interconnect propagation performances for integrated circuits of the 65 nm node and below","authors":"B. Blampey, B. Fléchet, A. Farcy, U. Bermond, O. Cueto, J. Torres, G. Angénieux","doi":"10.1109/IITC.2005.1499948","DOIUrl":"https://doi.org/10.1109/IITC.2005.1499948","url":null,"abstract":"The placement and size of square dummies degrade electrical performances mainly in terms of interconnect capacitance and propagation delay time. Electrical parameters for an isolated interconnect are obtained in a whole spectrum (up to 40 GHz) by electromagnetic modeling. Parasitic effects could be traduced by a fictitious increase of the relative permittivity k-value of inter-level dielectric cutting down performances of porous ULK integration for future 65 and 45 nm technology nodes. The capacitive effect of dummies on the interconnect test structure with a dielectric at k=2.7 was found, in some situations, to be equivalent to that obtained with a dielectric at k=3.2 without dummies. The capacitive effect of dummy distribution was also shown to be generally inhomogeneous, dramatically depending on dummy size and local interconnect design. However, an optimal size of dummies could be determined, leading to an homogeneous capacitive degradation effect, independent of the local interconnect dummy surrounding situation.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133001548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Impact of size effects on the resistivity of copper wires and consequently the design and performance of metal interconnect networks 尺寸效应对铜线电阻率的影响，从而影响金属互连网络的设计和性能

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499978

R. Sarvari, A. Naeemi, R. Venkatesan, J. Meindl

引用次数: 16

Influence of CMP process on defects in SiOC films and TDDB reliability CMP工艺对SiOC薄膜缺陷及TDDB可靠性的影响

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499950

N. Konishi, Y. Yamada, J. Noguchi, T. Jimbo, O. Inoue

引用次数: 2

Air gap integration for the 45nm node and beyond 45纳米及以上节点的气隙集成

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499997

R. Daamen, G. Verheijden, P. Bancken, T. Vandeweyer, J. Michelon, V. Nguyễn Hoàng, R. Hoofman, M. Gallagher

引用次数: 8

Effects of friction and loading parameters on four-point bend adhesion measurements of low-k thin film interconnect structures 摩擦和载荷参数对低k薄膜互连结构四点弯曲附着力测量的影响

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499917

D. M. Gage, Kyunghoon Kim, C. Litteken, R. Dauskardt

引用次数: 4