Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.最新文献

筛选
英文 中文
Interconnects for nanoelectronics 纳米电子学互连
K. Wang, A. Khitun, A. Flood
{"title":"Interconnects for nanoelectronics","authors":"K. Wang, A. Khitun, A. Flood","doi":"10.1109/IITC.2005.1499994","DOIUrl":"https://doi.org/10.1109/IITC.2005.1499994","url":null,"abstract":"In the nanoelectronics era with ever smaller devices and higher densities, there are challenges of signal transmission and information communications via interconnects. We examine the interconnect issues for both charge-based and spin-based information systems. For charge-based systems, since there are substantial activities in optical interconnect, this paper focuses on other concepts and approaches. Self-assembled molecular wires, carbon nanotubes/nanowires and virus engineered metallic wires can be used for interconnects. The use of new nano-architectures such as cellular automata, which use mostly nearest neighbors, make the use of self-assembled interconnects even more attractive. These techniques may be applied readily to molecular devices. Spin-based devices offer a new opportunity for low power, high functional throughput applications. We analyze the use of spin waves for information transmission buses referred to as spin wave bus. By introducing these novel circuits built on the spin-based devices and spin wave interconnect, we anticipate enhanced logic functionality. The challenges and issues are discussed.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128027463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Novel selective sidewall airgap process [single damascene interconnects] 新型选择性侧壁气隙工艺[单大马士革互连]
J. de Mussy, C. Bruynsereade, Z. Tokeil, G. Beyer, K. Maex
{"title":"Novel selective sidewall airgap process [single damascene interconnects]","authors":"J. de Mussy, C. Bruynsereade, Z. Tokeil, G. Beyer, K. Maex","doi":"10.1109/IITC.2005.1499959","DOIUrl":"https://doi.org/10.1109/IITC.2005.1499959","url":null,"abstract":"In the present work, we demonstrate a novel selective process for airgap formation at the interconnect sidewalls for single damascene interconnects. The proposed single step scheme is simpler than the currently existing airgap approaches. This process has been shown to be scalable down to spacings of 60 nm and allows capacitance drops in the range of 6%-39% with only a marginal increase in leakage current.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"177 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116894209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Using a low-k material with k=2.5 formed by a novel quasi-porogen approach for 65 nm Cu/LK interconnects 采用一种新型准多孔材料制备的k=2.5的低k材料制备65nm Cu/LK互连
C. C. Ko, C.H. Lin, L.P. Li, K.C. Lin, Y.C. Lu, S. Jeng, C. Yu, M. Liang
{"title":"Using a low-k material with k=2.5 formed by a novel quasi-porogen approach for 65 nm Cu/LK interconnects","authors":"C. C. Ko, C.H. Lin, L.P. Li, K.C. Lin, Y.C. Lu, S. Jeng, C. Yu, M. Liang","doi":"10.1109/IITC.2005.1499920","DOIUrl":"https://doi.org/10.1109/IITC.2005.1499920","url":null,"abstract":"A porous k=2.5 low-k material (LK2.5) with its pore size distribution and mechanical properties comparable to the ones of k=3.0 low-k materials (LK3.0) was developed by a novel quasi-porogen approach for 65 nm BEOL Cu dual damascene (DD) interconnects. As compared to the Cu/LK3.0 DD, the Cu/LK2.5 DD, processed using similar etching and ashing processes and chemistries, showed a 14% line-to-line (L-L) capacitance reduction at S=0.1 /spl mu/m. Other physical, electrical and reliability results show that the Cu/LK2.5 DD is comparable to the Cu/LK3.0 DD with no degradations commonly associated with conventional porous LK2.5s formed using porogens, such as peeling or LK recess in CMP, k increase or trench bottom roughening in patterning, high L-L leakage, low L-L Vbd or low SM resistance. Further process extendibility studies revealed that k<2.0 is also achievable using this quasi-porogen approach which strongly enables its applicability to current and future Cu/LK BEOL technologies.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124063890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信