C. C. Ko, C.H. Lin, L.P. Li, K.C. Lin, Y.C. Lu, S. Jeng, C. Yu, M. Liang
{"title":"采用一种新型准多孔材料制备的k=2.5的低k材料制备65nm Cu/LK互连","authors":"C. C. Ko, C.H. Lin, L.P. Li, K.C. Lin, Y.C. Lu, S. Jeng, C. Yu, M. Liang","doi":"10.1109/IITC.2005.1499920","DOIUrl":null,"url":null,"abstract":"A porous k=2.5 low-k material (LK2.5) with its pore size distribution and mechanical properties comparable to the ones of k=3.0 low-k materials (LK3.0) was developed by a novel quasi-porogen approach for 65 nm BEOL Cu dual damascene (DD) interconnects. As compared to the Cu/LK3.0 DD, the Cu/LK2.5 DD, processed using similar etching and ashing processes and chemistries, showed a 14% line-to-line (L-L) capacitance reduction at S=0.1 /spl mu/m. Other physical, electrical and reliability results show that the Cu/LK2.5 DD is comparable to the Cu/LK3.0 DD with no degradations commonly associated with conventional porous LK2.5s formed using porogens, such as peeling or LK recess in CMP, k increase or trench bottom roughening in patterning, high L-L leakage, low L-L Vbd or low SM resistance. Further process extendibility studies revealed that k<2.0 is also achievable using this quasi-porogen approach which strongly enables its applicability to current and future Cu/LK BEOL technologies.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"116 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Using a low-k material with k=2.5 formed by a novel quasi-porogen approach for 65 nm Cu/LK interconnects\",\"authors\":\"C. C. Ko, C.H. Lin, L.P. Li, K.C. Lin, Y.C. Lu, S. Jeng, C. Yu, M. Liang\",\"doi\":\"10.1109/IITC.2005.1499920\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A porous k=2.5 low-k material (LK2.5) with its pore size distribution and mechanical properties comparable to the ones of k=3.0 low-k materials (LK3.0) was developed by a novel quasi-porogen approach for 65 nm BEOL Cu dual damascene (DD) interconnects. As compared to the Cu/LK3.0 DD, the Cu/LK2.5 DD, processed using similar etching and ashing processes and chemistries, showed a 14% line-to-line (L-L) capacitance reduction at S=0.1 /spl mu/m. Other physical, electrical and reliability results show that the Cu/LK2.5 DD is comparable to the Cu/LK3.0 DD with no degradations commonly associated with conventional porous LK2.5s formed using porogens, such as peeling or LK recess in CMP, k increase or trench bottom roughening in patterning, high L-L leakage, low L-L Vbd or low SM resistance. Further process extendibility studies revealed that k<2.0 is also achievable using this quasi-porogen approach which strongly enables its applicability to current and future Cu/LK BEOL technologies.\",\"PeriodicalId\":156268,\"journal\":{\"name\":\"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.\",\"volume\":\"116 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2005.1499920\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2005.1499920","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Using a low-k material with k=2.5 formed by a novel quasi-porogen approach for 65 nm Cu/LK interconnects
A porous k=2.5 low-k material (LK2.5) with its pore size distribution and mechanical properties comparable to the ones of k=3.0 low-k materials (LK3.0) was developed by a novel quasi-porogen approach for 65 nm BEOL Cu dual damascene (DD) interconnects. As compared to the Cu/LK3.0 DD, the Cu/LK2.5 DD, processed using similar etching and ashing processes and chemistries, showed a 14% line-to-line (L-L) capacitance reduction at S=0.1 /spl mu/m. Other physical, electrical and reliability results show that the Cu/LK2.5 DD is comparable to the Cu/LK3.0 DD with no degradations commonly associated with conventional porous LK2.5s formed using porogens, such as peeling or LK recess in CMP, k increase or trench bottom roughening in patterning, high L-L leakage, low L-L Vbd or low SM resistance. Further process extendibility studies revealed that k<2.0 is also achievable using this quasi-porogen approach which strongly enables its applicability to current and future Cu/LK BEOL technologies.