Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.最新文献_第7页

Effect of porosity on reducing cohesive strength and accelerating crack growth in ultra low-k thin-films [IC interconnect applications] 孔隙率对超低k薄膜内聚强度降低和裂纹扩展的影响[IC互连应用]

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499990

E. Guyer, R. Dauskardt

引用次数: 2

Focus error reduction by photo-resist planarization in via-first dual damascene process 利用光致抗蚀剂平面化技术降低过头双大马士革工艺中的聚焦误差

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499963

Y. Matsui, G. Minamihaba, Y. Tateyama, K. Takahata, A. Shigeta, T. Nishioka, H. Yano, N. Hayasaka

{"title":"Focus error reduction by photo-resist planarization in via-first dual damascene process","authors":"Y. Matsui, G. Minamihaba, Y. Tateyama, K. Takahata, A. Shigeta, T. Nishioka, H. Yano, N. Hayasaka","doi":"10.1109/IITC.2005.1499963","DOIUrl":"https://doi.org/10.1109/IITC.2005.1499963","url":null,"abstract":"In order to reduce the focus error for the stacked mask process (SMAP) used in Cu/low-k dual damascene (DD) interconnect, a planarization technology of the under layer film by CMP was developed. Photo-resist was used for the under layer film. CMP slurry with resin abrasive was investigated for the photo-resist planarization. The slurry showed better planarity, lower risk to particle residue, and high selectivity to SiO/sub 2/ film. These advantages are attributable to the effects of the particle size and the material characteristics similar to photo-resist. Furthermore, it was found that it is effective for a higher CMP rate to turn the platen and head with lower rotational speed. Using the photo-resist planarization technology, application to via first DD process was investigated. It became clear that focus error reduction of 0.1 /spl mu/m is confirmed compared with conventional SMAP. The depth of focus (DOF) margin loss due to resist thickness variation caused by via density variation is completely canceled by photo-resist planarization.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121166735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

45 nm-node BEOL integration featuring porous-ultra-low-k/Cu multilevel interconnects 45纳米节点BEOL集成，具有多孔超低k/Cu多级互连

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499906

I. Sugiura, Y. Nakata, N. Misawa, S. Otsuka, N. Nishikawa, Y. Iba, F. Sugimoto, Y. Setta, H. Sakai, Y. Mizushima, Y. Kotaka, C. Uchibori, T. Suzuki, H. Kitada, Y. Koura, K. Nakano, T. Karasawa, Y. Ohkura, H. Watatani, M. Sato, S. Nakai, M. Nakaishi, N. Shimizu, S. Fukuyama, M. Miyajima, T. Nakamura, E. Yano, K. Watanabe

{"title":"45 nm-node BEOL integration featuring porous-ultra-low-k/Cu multilevel interconnects","authors":"I. Sugiura, Y. Nakata, N. Misawa, S. Otsuka, N. Nishikawa, Y. Iba, F. Sugimoto, Y. Setta, H. Sakai, Y. Mizushima, Y. Kotaka, C. Uchibori, T. Suzuki, H. Kitada, Y. Koura, K. Nakano, T. Karasawa, Y. Ohkura, H. Watatani, M. Sato, S. Nakai, M. Nakaishi, N. Shimizu, S. Fukuyama, M. Miyajima, T. Nakamura, E. Yano, K. Watanabe","doi":"10.1109/IITC.2005.1499906","DOIUrl":"https://doi.org/10.1109/IITC.2005.1499906","url":null,"abstract":"45 nm-node multilevel Cu interconnects with porous-ultra-low-k have successfully been integrated. Key features to realize 45 nm-node interconnects are as follows: 1) porous ultra-low-k material NCS (nano-clustering silica) has been applied to both wire-level and via-level dielectrics (what we call full-NCS structure), and its sufficient robustness has been demonstrated; 2) 70-nm vias have been formed by high-NA 193 nm lithography with fine-tuned model-based OPC and multi-hard-mask dual-damascene process - more than 90% yields of 1 M via chains have been obtained; 3) good TDDB (time-dependent dielectric breakdown) characteristics of 70 nm wire spacing filled with NCS has been achieved. Because it is considered that the applied-voltage (Vdd) of a 45 nm-node technology will be almost the same as that of the previous technology, the dielectrics have to endure the high electrical field. NCS in Cu wiring has excellent insulating properties without any pore sealing materials which cause either the k/sub eff/ value or actual wire width to be worse.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121350795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 13

Low-damage damascene patterning of SiOC(H) low-k dielectrics SiOC(H)低k介电材料的低损伤损伤图

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499913

H. Struyf, D. Hendrickx, J. Van Olmen, F. Iacopi, O. Richard, Y. Travaly, M. Van Hove, W. Boullart, S. Vanhaelemeersch

引用次数: 6

An analysis of the effect of wire resistance on circuit level performance at the 45-nm technology node 在45nm技术节点上导线电阻对电路级性能的影响分析

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499976

V. H. Nguyen, P. Christie, A. Heringa, A. Kumar, R. Ng

引用次数: 9

2-dimensional distribution of dielectric constants in patterned low-k structures by a nm-probe STEM/valence EELS (V-EELS) technique 利用纳米探针STEM/价态EELS (V-EELS)技术研究图像化低k结构中介电常数的二维分布

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499935

M. Shimada, Y. Otsuka, T. Harada, A. Tsutsumida, K. Inukai, H. Hashimoto, S. Ogawa

引用次数: 3

High transmission performance integrated antennas on SOI substrate for VLSI wireless interconnects 用于超大规模集成电路无线互连的SOI基板高传输性能集成天线

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499931

A. Triantafyllou, A. Farcy, P. Benech, F. Ndagijimana, J. Torres, O. Exshaw, C. Tinella, O. Richard, C. Raynaud

引用次数: 4

Electromigration threshold in copper interconnects and consequences on lifetime extrapolations 铜互连中的电迁移阈值及其对寿命外推的影响

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499942

D. Ney, X. Federspiel, V. Girault, O. Thomas, P. Gergaud

引用次数: 9

Low-resistance multi-walled carbon nanotube vias with parallel channel conduction of inner shells [IC interconnect applications] 具有内壳平行通道传导的低电阻多壁碳纳米管通孔[IC互连应用]

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499995

M. Nihei, D. Kondo, A. Kawabata, S. Sato, H. Shioya, M. Sakaue, T. Iwai, M. Ohfuti, Y. Awano

引用次数: 110

First-principle molecular model of PECVD SiOCH film for the mechanical and dielectric property investigation 用于力学和介电性能研究的PECVD SiOCH薄膜第一性原理分子模型

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499925

N. Tajima, T. Hamada, T. Ohno, K. Yoneda, N. Kobayashi, T. Hasaka, M. Fnoue

引用次数: 4