Focus error reduction by photo-resist planarization in via-first dual damascene process

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI:10.1109/IITC.2005.1499963

Y. Matsui, G. Minamihaba, Y. Tateyama, K. Takahata, A. Shigeta, T. Nishioka, H. Yano, N. Hayasaka

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Abstract

In order to reduce the focus error for the stacked mask process (SMAP) used in Cu/low-k dual damascene (DD) interconnect, a planarization technology of the under layer film by CMP was developed. Photo-resist was used for the under layer film. CMP slurry with resin abrasive was investigated for the photo-resist planarization. The slurry showed better planarity, lower risk to particle residue, and high selectivity to SiO/sub 2/ film. These advantages are attributable to the effects of the particle size and the material characteristics similar to photo-resist. Furthermore, it was found that it is effective for a higher CMP rate to turn the platen and head with lower rotational speed. Using the photo-resist planarization technology, application to via first DD process was investigated. It became clear that focus error reduction of 0.1 /spl mu/m is confirmed compared with conventional SMAP. The depth of focus (DOF) margin loss due to resist thickness variation caused by via density variation is completely canceled by photo-resist planarization.

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利用光致抗蚀剂平面化技术降低过头双大马士革工艺中的聚焦误差

为了减小铜/低钾双砷(DD)互连中堆叠掩膜工艺(SMAP)的聚焦误差，提出了一种CMP下膜平面化技术。下层膜采用光致抗蚀剂。采用树脂磨料对CMP浆料进行光抗蚀剂刨平。浆料具有较好的平面性、较低的颗粒残留风险和对SiO/sub - 2/膜的高选择性。这些优点是由于颗粒大小的影响和材料特性类似于光致抗蚀剂。此外，还发现以较低的转速转动压板和机头可以获得较高的CMP率。利用光致抗蚀剂平面化技术，研究了其在过一次DD工艺中的应用。结果表明，与常规SMAP相比，焦差减小了0.1 /spl mu/m。光致抗蚀剂平面化完全消除了由通孔密度变化引起的抗蚀剂厚度变化引起的焦深余量损失。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.

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